GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line.

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch.

High wall-plug efficiency and narrow linewidth III-V-on-silicon C-band DFB laser diodes.

We present recent results on compact and power efficient C-band distributed feedback lasers through adhesive bonding of a III-V die onto a silicon-on-insulator circuit. A wall-plug efficiency up to 16% is achieved for bias currents below 40 mA. The laser cavity is 180 µm long and a single facet output power up to 11 mW is measured at 20 °C by incorporating a broadband reflector in the silicon waveguide at one side of the cavity.

Recent Progress of Imprinted Polymer Photonic Waveguide Devices and Applications.

Polymers are promising materials for fabricating photonic integrated waveguide devices. Versatile functional devices can be manufactured using a simple process, with low cost and potential mass-manufacturing. This paper reviews the recent progress of polymer photonic integrated devices fabricated using the UV imprinting technique.

Cascaded-Microrings Biosensors Fabricated on a Polymer Platform.

Polymer-based single-microring biosensors usually have a small free spectral range (FSR) that hampers the tracing of the spectrum shifting in the measurement. A cascade of two microring resonators based on the Vernier effect, is applied in this article in order to make up for this defect. A small FSR difference between the reference microring and the sensing microring is designed, in order to superpose the periodic envelope signal onto the constituent peaks, which makes it possible to continuously track the spectrum of the sensor.

1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding.

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated.

Investigation of Grating-Assisted Trimodal Interferometer Biosensors Based on a Polymer Platform.

A grating-assisted trimodal interferometer biosensor is proposed and numerically analyzed. A long period grating coupler, for adjusting the power between the fundamental mode and the second higher order mode, is investigated, and is shown to act as a conventional directional coupler for adjusting the power between the two arms. The trimodal interferometer can achieve maximal fringe visibility when the powers of the two modes are adjusted to the same value by the grating coupler, which means that a better limit of detection can be expected.

12.5 Gbit/s discretely tunable InP-on-silicon filtered feedback laser with sub-nanosecond wavelength switching times.

A heterogeneously integrated InP-on-silicon fast tunable filtered feedback laser is demonstrated. The laser device consists of a main Fabry-Pérot cavity connected to an integrated arrayed waveguide grating of which the outputs form external cavities in which semiconductor optical amplifiers can be switched to provide single-mode operation and tunability. The laser can operate at four different wavelengths whereby switching between each wavelength channel is done within one nanosecond.

Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser.

A heterogeneously integrated widely tunable III-V-on-silicon ring laser with unidirectional operation is demonstrated. 40 nm tuning range (from 1560 nm to 1600 nm) is obtained using the Vernier effect between two ring resonators incorporated in the ring laser cavity. Unidirectional operation is obtained by integrating a DBR reflector coupling the clockwise and counterclockwise mode of the ring laser cavity.

III-V-on-silicon three-section DBR laser with over 12 nm continuous tuning range.

Device and tuning characteristics of a novel heterogeneously integrated III-V-on-silicon three-section distributed Bragg reflector (DBR) laser are presented. The laser exhibits a continuous wavelength tuning range of more than 12 nm. Thermal tuning is achieved through carrier injection in the passive tuning layer of a III-V tunable twin-guide membrane.

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.

Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing.

We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing.

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser.

We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current.

Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.

Experimental demonstration of reservoir computing on a silicon photonics chip.

In today's age, companies employ machine learning to extract information from large quantities of data. One of those techniques, reservoir computing (RC), is a decade old and has achieved state-of-the-art performance for processing sequential data. Dedicated hardware realizations of RC could enable speed gains and power savings.

Heterogeneously integrated III-V/silicon distributed feedback lasers.

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

Unidirectional III-V microdisk lasers heterogeneously integrated on SOI.

We demonstrate unidirectional bistability in microdisk lasers electrically pumped and heterogeneously integrated on SOI. The lasers operate in continuous wave regime at room temperature and are single mode. Integrating a passive distributed Bragg reflector (DBR) on the waveguide to which the microdisk is coupled feeds laser emission back into the laser cavity.

Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.

We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.

Cascadable excitability in microrings.

To emulate a spiking neuron, a photonic component needs to be excitable. In this paper, we theoretically simulate and experimentally demonstrate cascadable excitability near a self-pulsation regime in high-Q-factor silicon-on-insulator microrings. For the theoretical study we use Coupled Mode Theory.

Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled.

Broadband microwave photonic fully tunable filter using a single heterogeneously integrated III-V/SOI-microdisk-based phase shifter.

A broadband microwave photonic phase shifter based on a single III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic silicon-on-insulator waveguide is reported. The phase shift tunability is accomplished by modifying the effective index through carrier injection. A comprehensive semi-analytical model aiming at predicting its behavior is formulated and confirmed by measurements.

A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide.

We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9) is demonstrated at 2.

Athermal arrayed waveguide gratings in silicon-on-insulator by overlaying a polymer cladding on narrowed arrayed waveguides.

Athermal arrayed waveguide gratings (AWGs) in silicon-on-insulator (SOI) are experimentally demonstrated for the first time to our knowledge. By using narrowed arrayed waveguides, and then overlaying a polymer layer, the wavelength temperature dependence of the AWGs is successfully reduced to -1.5 pm/°C, which is more than 1 order of magnitude less than that of normal SOI AWGs.