TCAD Simulation of Two Photon Absorption-Transient Current Technique Measurements on Silicon Detectors and LGADs.

Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to confirm the accuracy of the conclusions drawn. In the framework of semiconductor detector characterisation, one powerful tool for such validation is the Two Photon Absorption-Transient Current Technique (TPA-TCT), which allows for highly precise, three-dimensional spatially-resolved characterisation of semiconductor detectors.

Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption-Transient Current Technique.

The Two-Photon Absorption-Transient Current Technique (TPA-TCT) is a device characterisation technique that enables three-dimensional spatial resolution. Laser light in the quadratic absorption regime is employed to generate excess charge carriers only in a small volume around the focal spot. The drift of the excess charge carriers is studied to obtain information about the device under test.

Fiber laser system of 1550 nm femtosecond pulses with configurable properties for the two-photon excitation of transient currents in semiconductor detectors.

A fiber laser system emitting ultrashort femtosecond pulses at 1550 nm with configurable properties has been developed as an excitation source for the two-photon absorption transient current technique (TPA-TCT). The modules of the system are designed to provide the optical specifications required at the output for localized characterization of semiconductor radiation detectors: variation of pulse energy between 10 nJ and 10 , variation of the pulse repetition rate from 8.2 MHz to single shot, and variation of pulse duration between 300 and 600 fs.