On-chip bacterial foraging training in silicon photonic circuits for projection-enabled nonlinear classification.

On-chip training remains a challenging issue for photonic devices to implement machine learning algorithms. Most demonstrations only implement inference in photonics for offline-trained neural network models. On the other hand, artificial neural networks are one of the most deployed algorithms, while other machine learning algorithms such as supporting vector machine (SVM) remain unexplored in photonics.

Inter-layer light transition in hybrid III-V/Si waveguides integrated by µ-transfer printing.

We demonstrate low-loss and broadband light transition from III-V functional layers to a Si platform via two-stage adiabatic-crossing coupler waveguides. A 900-µm-long and 2.7-µm-thick III-V film waveguide consisting of a GaInAsP core and InP cladding layers is transferred onto an air-cladding Si photonic chip by the µ-transfer printing (µ-TP) method.

Simple and fully CMOS-compatible low-loss fiber coupling structure for a silicon photonics platform.

A simple low-loss fiber coupling structure consisting of a Si inverted-taper waveguide and a 435 nm wide and 290 nm thick SiN waveguide was fabricated with fully complementary metal-oxide semiconductor (CMOS)-compatible processes. The small SiN waveguide can expand to the optical field corresponding to a fiber with a mode-field diameter of 4.1 µm.

Arbitrary reconfiguration of universal silicon photonic circuits by bacteria foraging algorithm to achieve reconfigurable photonic digital-to-analog conversion.

Reconfigurable/reprogrammable universal silicon photonic circuits represent a paradigm shift in designing photonic devices. However, it is very challenging to perform adaptive arbitrary reconfiguration when the high-dimensional solution of phase distribution cannot be explicitly determined, especially when there are random initial phase errors, which hinder the implementation of novel potential functions in universal circuits. This work presents an arbitrary black-box reconfiguration for universal circuits with random phase errors by a bacteria-foraging algorithm and unlocks a novel function of arbitrary-port-and-arbitrary-bit-resolution reconfigurable 6-bit photonic digital-to-analog conversion.

Interferometric autocorrelation of ultrafast optical pulses in silicon sub-micrometer p-i-n waveguides.

We investigated the high-sensitivity interferometric autocorrelation of ultrafast optical pulses utilizing two-photon absorption in sub-micrometer silicon p-i-n waveguides. The autocorrelation sensitivities were evaluated to be about 0.5 and 4.

Silicon traveling-wave Mach-Zehnder modulator under distributed-bias driving.

The silicon traveling-wave (TW) Mach-Zehnder modulator (MZM) is one of the most important devices in silicon photonic transceivers for high-speed optical interconnects. Its phase shifter utilizes carrier depletion of pn diodes for high speed, but suffers low modulation efficiency. Extensive efforts have been made on pre-fabrication optimizations, including waveguides, doping, and electrodes to enhance high-frequency modulation efficiency.

High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter.

We demonstrate a silicon Mach-Zehnder modulator (MZM) based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform, which can be fabricated by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer. Constructing a vertical p-n junction in a flat etchless SOI layer provides superior controllability and uniformity of carrier profiles. Moreover, the waveguide structure based on a thin a-Si:H strip line can be fabricated easily and precisely.

Optical autocorrelation performance of silicon wire p-i-n waveguides utilizing the enhanced two-photon absorption.

Optical autocorrelation accuracy was for the first time analyzed for the silicon waveguide based autocorrelators utilizing two-photon absorption (TPA) under various short pulse conditions by numerical simulation. As for autocorrelation operation in the sub-μm silicon p-i-n rib waveguides on the 220 nm SOI (silicon on insulator) wafers, the autocorrelation error of pulse width measurement gradually increases with the increase of the peak power for both Gaussian and hyperbolic secant pulses due to the influence of free-carrier absorption (FCA). For the same pulse type, the relative error is independent of the input pulse width; however different pulse type has different peak power dependency of the accuracy.

Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter.

Ultra-compact 8 × 8 strictly-non-blocking Si-wire PILOSS switch.

We report on a path-independent insertion-loss (PILOSS) 8 × 8 matrix switch based on Si-wire waveguides, which has a record-small footprint of 3.5 × 2.4 mm2.