Recent Advancements in Polysulfone Based Membranes for Fuel Cell (PEMFCs, DMFCs and AMFCs) Applications: A Critical Review.

In recent years, ion electrolyte membranes (IEMs) preparation and properties have attracted fabulous attention in fuel cell usages owing to its high ionic conductivity and chemical resistance. Currently, perfluorinatedsulfonicacid (PFSA) membrane has been widely employed in the membrane industry in polymer electrolyte membrane fuel cells (PEMFCs); however, Nafion suffers reduced proton conductivity at a higher temperature, requiring noble metal catalyst (Pt, Ru, and Pt-Ru), and catalyst poisoning by CO. Non-fluorinated polymers are a promising substitute.

Decoration of CuO NWs Gas Sensor with ZnO NPs for Improving NO Sensing Characteristics.

This paper introduces a method for improving the sensitivity to NO gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO gas than the pristine CuO gas sensor.

Sensitivity Improvement of Urchin-Like ZnO Nanostructures Using Two-Dimensional Electron Gas in MgZnO/ZnO.

This paper introduces a strategy for improving the sensitivity of a gas sensor to NO gas. The gas sensor was fabricated using urchin-like ZnO nanostructures grown on MgO particles via vapor-phase growth and decorated with MgZnO nanoparticles via a sol-gel process. The urchin-like ZnO gas sensor decorated with MgZnO showed higher sensitivity to NO gas than a pristine urchin-like ZnO gas sensor.

Effect of the cobalt and zinc ratio on the preparation of zeolitic imidazole frameworks (ZIFs): synthesis, characterization and supercapacitor applications.

The effect of the cobalt nitrate hexahydrate/zinc nitrate hexahydrate molar ratio on the physicochemical features of the zeolitic imidazole framework (ZIF) was studied. ZIFs were prepared by using 2-methyl imidazole as the cross-linker at room temperature without any additives in methanol solution. From the obtained results, it was found that the Co/Zn ratio has a tremendous impact on the surface area, crystallinity, pore diameter and electrochemical performance of ZIFs.

Improved Sensitivity of α-FeO Nanoparticle-Decorated ZnO Nanowire Gas Sensor for CO.

A strategy for improving the sensitivity of a sensor for detecting CO and NH gases is presented herein. The gas sensor was fabricated from ZnO metal oxide semiconductor nanostructures grown via a vapor⁻liquid⁻solid process and decorated with α-FeO nanoparticles via a sol⁻gel process. The response was enhanced by the formation of an α-FeO/ZnO n⁻n heterojunction and the growth of thinner wires.

Improved Electrical Performance of SiO₂-Doped Indium Zinc Oxide Thin-Film Transistor.

In this study, we investigated the effect of oxygen content on the stability and the role of silicon in amorphous SiO₂-doped indium-zinc-oxide thin film transistor. The SiO₂-doped IZO (SIZO) thinfilms were deposited at room temperature by radio-frequency magnetron co-sputtering. To optimize stability and electrical performance, we changed the amount of oxygen by changing oxygen gas ratio in reactive sputtering (11%, 12%, and 13%) and used SiO₂ target to deposit SIZO active layer.

Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor.

We investigated the effects of a double active layer (DAL) and acetic acid stabilizer on zinc tin oxide (ZTO) thin-film transistors (TFTs) fabricated using a solution process. The DAL was composed of two layers created by a ZTO solution doped with the same or different percentiles of an atomic Sn concentration (30 at.%, 60 at.

Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor.

We fabricated amorphous oxide semiconductor thin-film transistors (TFTs) using Ge-doped InZnO (Ge-IZO) thin films as active-channel layers. The Ge-IZO thin films were deposited at room temperature by radio-frequency (RF) magnetron co-sputtering system, and then annealed in air for 1 h at 300 °C. Some processing parameters such as sputtering oxygen partial pressure [O2/(Ar + O2)] and sputtering power for GeO2 target were changed to investigate what was the optimal amount of Ge in the Ge-IZO active layer.