Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts.

Two-dimensional (2D) molybdenum disulfide (MoS) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS films has not yet been established, although contact property is directly associated to the device performance.

Substitutional Fluorine Doping of Large-Area Molybdenum Disulfide Monolayer Films for Flexible Inverter Device Arrays.

Reliable and controllable doping of transition metal dichalcogenides (TMDCs) is a mandatory requirement for practical large-scale electronic applications. However, most of the literature on the doping methodologies of TMDCs has focused on -type doping and multilayer TMDC rather than a monolayer one enabling large-scale growth. Herein, we report substitutional fluorine doping of a chemical vapor deposition (CVD)-grown molybdenum disulfide (MoS) monolayer film using a delicate SF plasma treatment.

Graphene Quantum Dot Oxidation Governs Noncovalent Biopolymer Adsorption.

Graphene quantum dots (GQDs) are an allotrope of carbon with a planar surface amenable to functionalization and nanoscale dimensions that confer photoluminescence. Collectively, these properties render GQDs an advantageous platform for nanobiotechnology applications, including optical biosensing and delivery. Towards this end, noncovalent functionalization offers a route to reversibly modify and preserve the pristine GQD substrate, however, a clear paradigm has yet to be realized.

Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer.

Contact engineering for two-dimensional (2D) transition metal dichalcogenides (TMDCs) is crucial for realizing high-performance 2D TMDC devices, and most studies on contact properties of 2D TMDCs have mainly focused on Fermi level unpinning. Here, we investigated electrical and photoelectrical properties of chemical vapor deposition (CVD)-grown molybdenum disulfide (MoS) monolayer devices depending on metal contacts, Ti/Pt, Ti/Au, Ti, and Ag, and particularly demonstrated the essential role of defects in MoS in contact properties. Remarkably, MoS devices with Ag contacts show a field-effect mobility of 12.

Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices.

The modulation of the electrical properties of graphene and its device configurations for low-power consumption are important in developing graphene-based logic electronics. Here, we demonstrate the change in the charge transport in graphene from ambipolar to unipolar using surface charge transfer doping of the polymer electrolyte. Unipolar graphene field-effect transistors (GFETs) were obtained by the surface treatment of poly(acrylic acid) (PAA) for p-type and poly(ethyleneimine) (PEI) for n-type as polymer-electrolyte gates.

Honeycomb-Like Nitrogen-Doped Carbon 3D Nanoweb@Li S Cathode Material for Use in Lithium Sulfur Batteries.

Current lithium-ion batteries have a low theoretical capacity that is insufficient for use in emerging electric vehicles and energy-storage systems. The development of lithium-sulfur batteries utilizing Li S cathodes would be a promising option to overcome the capacity limitation. In this work, new three-dimensional (3D) honeycomb-like N-doped carbon nanowebs (HCNs) have been synthesized through a facile aqueous solution route for use as a cathode material in lithium-sulfur batteries.

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS Field-Effect Transistors.

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high-performance devices while adapting for large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD-grown MoS film and a Ag electrode as an interfacial layer.

Tunable Ion Sieving of Graphene Membranes through the Control of Nitrogen-Bonding Configuration.

Graphene-oxide (GO) membranes with notable ionic-sieving properties have attracted significant attention for many applications. However, the swelling and unstable nanostructure of GO laminates in water results in enlarged interlayer spacing and a low permeation cut-off, limiting their applicability for water purification and desalination. Herein, we propose novel nitrogen-doped graphene (NG) membranes for use in tunable ion sieving that are made via facile fabrication by a time-dependent N-doping technique.

Novel sulfonated graphene oxide incorporated polysulfone nanocomposite membranes for enhanced-performance in ultrafiltration process.

A novel polysulfone (PSf) nanocomposite ultrafiltration (UF) membrane using sulfonated graphene oxide (SGO) as additives was fabricated and investigated. SGO nanoparticles were chemically synthesized from graphene oxide (GO) by using sulfuric acid (HSO) and were confirmed by Raman and Fourier transform infrared (FTIR) spectroscopy. The morphology of prepared membranes was characterized by scanning electron microscopy (SEM), energy dispersive x-ray (EDX) and atomic force microscopy (AFM).

Effect of ribbon width on electrical transport properties of graphene nanoribbons.

There has been growing interest in developing nanoelectronic devices based on graphene because of its superior electrical properties. In particular, patterning graphene into a nanoribbon can open a bandgap that can be tuned by changing the ribbon width, imparting semiconducting properties. In this study, we report the effect of ribbon width on electrical transport properties of graphene nanoribbons (GNRs).

Control over Electron-Phonon Interaction by Dirac Plasmon Engineering in the BiSe Topological Insulator.

Understanding the mutual interaction between electronic excitations and lattice vibrations is key for understanding electronic transport and optoelectronic phenomena. Dynamic manipulation of such interaction is elusive because it requires varying the material composition on the atomic level. In turn, recent studies on topological insulators (TIs) have revealed the coexistence of a strong phonon resonance and topologically protected Dirac plasmon, both in the terahertz (THz) frequency range.

Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment.

Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS and MoSvia hydrazine doping and sulfur annealing.

Chemically Functionalized, Well-Dispersed Carbon Nanotubes in Lithium-Doped Zinc Oxide for Low-Cost, High-Performance Thin-Film Transistors.

Surface-functionalized carbon nanotubes (CNTs) are introduced into lithium-doped ZnO thin-film transistors (TFTs) as an alternative to the conventional incorporation of an expensive element, indium. The crucial role of surface functionalization of CNTs is clarified with the demonstration of indium-free ZnO-based TFTs with a field-effect mobility of 28.6 cm(2) V(-1) s(-1) and an on/off current ratio of 9 × 10(6) for low-cost, high-performance electronics.

Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure.

There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure.

Palladium Nanoribbon Array for Fast Hydrogen Gas Sensing with Ultrahigh Sensitivity.

A lithographically aligned palladium nano-ribbon (Pd-NRB) array with gaps of less than 40 nm is fabricated on a poly(ethylene terephthalate) substrate using the direct metal transfer method. The 200 μm Pd-NRB hydrogen gas sensor exhibits an unprecedented sensitivity of 10(9) % after bending treatment, along with fast sensing behavior (80% response time of 3.6 s and 80% recovery time of 8.

Chemically Driven, Water-Soluble Composites of Carbon Nanotubes and Silver Nanoparticles as Stretchable Conductors.

In the past decade, hybrid materials for highly stretchable, conductive electrodes have received tremendous attention in the fields of emerging wearable electronic, optoelectronic, and sensing devices. Here, we present a previously unrecognized aqueous route to producing stretchable conductors composed of silver nanoparticles (AgNPs) and single-walled carbon nanotubes (SWNTs) embedded in a polyurethane (PU) matrix, in contrast to ones dispersed in toxic organic solvents reported to date. The intact chemical interaction between one-dimensional SWNTs, for endowing the capability of establishing conductive pathways even in stretching conditions, and AgNPs, for enabling high conductivity of the composites, is achieved in an aqueous medium with an anionic polyelectrolyte, poly(acrylic acid), that undergoes pH-dependent conformational evolution.

Isoindigo-Based Donor-Acceptor Conjugated Polymers for Air-Stable Nonvolatile Memory Devices.

Nonvolatile resistive memory devices based on a new low bandgap donor-acceptor (D-A) conjugated polymer, poly(()-6,6'-bis(2,3-dihydrothieno[3,4-][1,4]dioxine-5-yl)-1,1'-bis(2-octyldodecyl)-[3,3'-biindolinyi-dene]-2,2'-dione) (PIDED), which are fabricated and operated in ambient air, are reported. The D-A conjugated polymer is synthesized from 2,3-dihydrothieno[3,4-][1,4]dioxine and isoindigo as an electron donor and an electron acceptor, respectively, using CH-arylation polymerization. The devices show nonvolatile, unipolar resistive switching behaviors with a high on/off current ratio (∼10), excellent endurance cycles (>200 cycles), and a long retention time (>10 s) in ambient air.

Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes.

Pristine graphene and a graphene interlayer inserted between indium tin oxide (ITO) and p-GaN have been analyzed and compared with ITO, which is a typical current spreading layer in lateral GaN LEDs. Beyond a certain current injection, the pristine graphene current spreading layer (CSL) malfunctioned due to Joule heat that originated from the high sheet resistance and low work function of the CSL. However, by combining the graphene and the ITO to improve the sheet resistance, it was found to be possible to solve the malfunctioning phenomenon.

Quantitatively estimating defects in graphene devices using discharge current analysis method.

Defects of graphene are the most important concern for the successful applications of graphene since they affect device performance significantly. However, once the graphene is integrated in the device structures, the quality of graphene and surrounding environment could only be assessed using indirect information such as hysteresis, mobility and drive current. Here we develop a discharge current analysis method to measure the quality of graphene integrated in a field effect transistor structure by analyzing the discharge current and examine its validity using various device structures.

Sub-10 nm Graphene Nanoribbon Array field-effect transistors fabricated by block copolymer lithography.

Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed.

Effects of multi-layer graphene capping on Cu interconnects.

The benefits of multi-layer graphene (MLG) capping on Cu interconnects have been experimentally demonstrated. The resistance of MLG capped Cu wires improved by 2-7% compared to Cu wires. The breakdown current density increased by 18%, suggesting that the MLG can act as an excellent capping material for Cu interconnects, improving the reliability characteristics.

Mode tunable p-type Si nanowire transistor based zero drive load logic inverter.

A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at V(DD) of -20 V was successfully fabricated on a substrate.

Elevated temperature anodized Nb2O5: a photoanode material with exceptionally large photoconversion efficiencies.

Here, we demonstrate that niobium pentoxide (Nb(2)O(5)) is an ideal candidate for increasing the efficiencies of dye-sensitized solar cells (DSSCs). The key lies in developing a Nb(2)O(5) crisscross nanoporous network, using our unique elevated temperature anodization process. For the same thicknesses of ∼4 μm, the DSSC based on the Nb(2)O(5) layer has a significantly higher efficiency (∼4.

Anomalous thickness-dependence of photocurrent explained for state-of-the-art planar nano-heterojunction organic solar cells.

Due to their simple geometry and design, planar heterojunction (PHJ) solar cells have advantages both as potential photovoltaics with more efficient charge extraction than their bulk heterojunction (BHJ) counterparts, and as idealized interfaces to study basic device operation. The main reason for creating BHJs was the limited exciton diffusion length in the active materials of the PHJ: if an exciton is generated at a distance greater than its diffusion length from the hetero-interface of the PHJ, it would be very unlikely to be able to contribute to the photocurrent. Based on this argument one expects a maximum in the photocurrent of PHJs for a thickness of the active layer equal to the exciton diffusion length (~10 nm).