Electron emission from individual indium arsenide semiconductor nanowires.

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve, and the energy spectrum of the emitted electron beam. The two investigated nanowires showed stable, Fowler-Nordheim-like emission behavior and a small energy spread.

In situ transmission electron microscopy observations of individually selected freestanding carbon nanotubes during field emission.

For the successful application of carbon nanotubes (CNTs) as electron sources in various applications it is important to understand the relation between the morphology of the CNT and its emission properties. A method was developed to study individual, freestanding and pre-selected CNTs with high-resolution transmission electron microscopy (TEM). The technique provided important parameters of the CNT, such as the number of carbon walls and the nature of its apex.

Epitaxial growth of InP nanowires on germanium.

The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate.