Thermal Expansion of 3C-SiC Obtained from In-Situ X-ray Diffraction at High Temperature and First-Principal Calculations.

In situ X-ray crystallography powder diffraction studies on beta silicon carbide (3C-SiC) in the temperature range 25-800 °C at the maximum peak (111) are reported. At 25 °C, it was found that the lattice parameter is 4.596 Å, and coefficient thermal expansion (CTE) is 2.

Graphite thermal expansion coefficient measured by in-situ x-ray diffraction.

Precision temperature measurement of a nano system with high sensitivity and fast response is still a challenge. The marvelous thermal and mechanical properties of graphite will allow the creation of superior nanoscale temperature sensors. In-situ x-ray diffraction was employed to determine the graphite hexagonal crystal lattice dimensions and the coefficient of thermal expansion based on the calculation of its interatomic distance.