Publications by authors named "Monia Spera"
Materials (Basel)
October 2019
Article Synopsis
- - This paper investigates the electrical activation and Ohmic contact properties of p-type Al-implanted silicon carbide (4H-SiC) after different high-temperature annealing processes.
- - The research found that the electrical activation of Al increased significantly from 39% to 56% with varying annealing temperatures, indicating improved dopant efficiency.
- - The study also revealed that the Ti/Al/Ni contacts exhibited Ohmic behavior after 950 °C annealing, and specific contact resistance decreased significantly with increased annealing temperatures, which is promising for device applications.
