Improving the Conversion Ratio of QDSCs via the Passivation Effects of NiS.

To revolutionize the photochemical efficiency of quantum dots sensitized solar cells (QDSSCs) devices, herein, a passivation of the cells with multilayer material has been developed for heterojunctions TiO/NiS/MnS/HI-30/Pt devices. In this study, NiS and MnS were deposited on a photoanode for the first time as passivated photon absorbers at room temperature. The adoption of NiS as a passisvative layer could tailor the active surface area and improve the photochemical properties of the newly modified cells.