Silicon slot fin waveguide on bonded double-SOI for a low-power accumulation modulator fabricated by an anisotropic wet etching technique.

We propose a new low VπL, fully-crystalline, accumulation modulator design based on a thin horizontal gate oxide slot fin waveguide, on bonded double Silicon-on-Insulator (SOI). A combination of anisotropic wet etching and the mirrored crystal alignment of the top and bottom SOI layers allows us for the first time to selectively pattern the bottom layer from above. Simulations presented herein show a VπL = 0.

Random telegraph noise from resonant tunnelling at low temperatures.

The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN.

Ultrahigh-Q photonic crystal cavities in silicon rich nitride.

Ultrahigh-Q Photonic Crystal cavities were realized in a suspended Silicon Rich Nitride (SiNx) platform for applications at telecom wavelengths. Using a line width modulated cavity design we achieved a simulated Q of 520,000 with a modal volume of 0.77(λ/n).

Enhanced light emission from improved homogeneity in biaxially suspended Germanium membranes from curvature optimization.

A silicon compatible light source is crucial to develop a fully monolithic silicon photonics platform. Strain engineering in suspended Germanium membranes has offered a potential route for such a light source. However, biaxial structures have suffered from poor optical properties due to unfavorable strain distributions.