Publications by authors named "Mohd F Mohd Razip Wee"

Gallium nitride (GaN), widely known as a wide bandgap semiconductor material, has been mostly employed in high power devices, light emitting diodes (LED), and optoelectronic applications. However, it could be exploited differently due to its piezoelectric properties, such as its higher SAW velocity and strong electromechanical coupling. In this study, we investigated the affect of the presence of a guiding layer made from titanium/gold on the surface acoustic wave propagation of the GaN/sapphire substrate.

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The electrochemical biosensor devices based on enzymes for monitoring biochemical substances are still considered attractive. We investigated the immobilization of glucose oxidase (GOx) on a new composite nanomaterial poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS)/titanium carbide,(TiC)/graphene quantum dots(GQD) modified screen-printed carbon electrode (SPCE) for glucose sensing. The characterization and electrochemical behavior of PEDOT:PSS/TiC/GQD towards the electrocatalytic oxidation of GOx was analyzed by FTIR, XPS, SEM, cyclic voltammetry (CV), and differential pulse voltammetry (DPV).

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We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (CH) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of CH and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in.

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Diabetic foot ulcer (DFU) is a chronic wound frequently delayed from severe infection. Wound dressing provides an essential barrier between the ulcer and the external environment. This review aimed to analyse the effectiveness of antibacterial collagen-based dressing for DFU treatment in a clinical setting.

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A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology.

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