Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials.

This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework incorporates higher-order anharmonic terms, specifically quartic and sextic terms. The solutions to the Schrödinger equation have been computed employing the finite element method and the effective mass theory.

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity.

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects.

Thermionic Emission of Atomic Layer Deposited MoO/Si UV Photodetectors.

Ultrathin MoO semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO/-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported.

Development of Yttrium-Doped BaTiO for Next-Generation Multilayer Ceramic Capacitors.

The use of electronic devices that incorporate multilayer ceramic capacitors (MLCCs) is on the rise, requiring materials with good electrical properties and a narrow band gap. This study synthesized yttrium-substituted barium titanate (Ba Y TiO, BYT) using a sol-gel process at 950 °C with varying concentrations of yttrium (0 ≤ ≤ 0.3).

Functionality and Activity of Sol-Gel-Prepared Co and Fe co-Doped Lead-Free BTO for Thermo-Optical Applications.

The BTO, BFTC, and BCTF compounds were synthesized by the sol-gel method. The XRD study revealed the formation of single-phase tetragonal perovskite structures with the space group (P4mm). The crystalline parameters were studied as a function of Fe and Co contents and occupation of Ba and/or Ti sites by Fe and Co in the BTO lattice.

Nanostructured MoS and WS Photoresponses under Gas Stimuli.

This study was on the optoelectronic properties of multilayered two-dimensional MoS and WS materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO, and O environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS (n-type)/Si (p-type) and WS (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.

Photonic bandgap engineering in (VO)/(WSe)photonic superlattice for versatile near- and mid-infrared phase transition applications.

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VOas a strongly correlated phase transition material and tungsten diselenide (WSe) as a two-dimensional transition metal dichalcogenide layer.