Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application.

Organic-inorganic hybrid light-emitting devices have garnered significant attention in the last few years due to their potential. These devices integrate the superior electron mobility of inorganic semiconductors with the remarkable optoelectronic characteristics of organic semiconductors. The inquiry focused on analyzing the optical and electrical properties of a light-emitting heterojunction that combines p-type GaN with organic materials (PEDOT, PSS, and PMMA).

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition.

In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of laser fluence.

Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique.

In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 °C. The structural and optical properties of GaN films as a function of substrate temperature are investigate. XRD studies reveal that the GaN films deposited on porous silicon are nanocrystalline with a hexagonal wurtzite structure along (002) plane.

Enhancing the sensing behavior of a reduced graphene magnetite-based plasmonic optical fiber sensor.

The D-shaped optical fiber is a base for the magnetite-based graphene nanocomposite (/) for a Pb heavy metal sensing layer. The designed sensor was studied under the effects of rapid annealing, water circulation, and plasmonic tuning. Various annealing temperatures (100°C, 200°C, 300°C, and 400°C) were investigated.