Valley-dimensionality locking of superconductivity in cubic phosphides.

Two-dimensional superconductivity is primarily realized in atomically thin layers through extreme exfoliation, epitaxial growth, or interfacial gating. Apart from their technical challenges, these approaches lack sufficient control over the Fermiology of superconducting systems. Here, we offer a Fermiology-engineering approach, allowing us to desirably tune the coherence length of Cooper pairs and the dimensionality of superconducting states in arsenic phosphides AsP under hydrostatic pressure.

New insights into band inversion and topological phase of TiNI monolayer.

Two-dimensional (2D) topological insulators (TIs) hold great promise for future quantum information technologies. Among the 2D-TIs, the TiNI monolayer has recently been proposed as an ideal material for achieving the quantum spin Hall effect at room temperature. Theoretical predictions suggest a sizable bandgap due to the spin-orbit coupling (SOC) of the electrons at and near the Fermi level with a nontrivial  topology of the electronic states, which is robust under external strain.

Correlation-driven electronic nematicity in the Dirac semimetal BaNiS.

In BaNiS, a Dirac nodal line band structure exists within a two-dimensional Ni square lattice system, in which significant electronic correlation effects are anticipated. Using scanning tunneling microscopy (STM), we discover signs of correlated-electron behavior, namely electronic nematicity appearing as a pair of -symmetry striped patterns in the local density-of-states at ∼60 meV above the Fermi energy. In observations of quasiparticle interference, as well as identifying scattering between Dirac cones, we find that the striped patterns in real space stem from a lifting of degeneracy among electron pockets at the Brillouin zone boundary.

Axial-Bonding-Driven Dimensionality Effect on the Charge-Density Wave in NbSe.

2-NbSe is a prototypical charge-density-wave (CDW) system, exhibiting such a symmetry-breaking quantum ground state in its bulk and down to a single-atomic-layer limit. However, how this state depends on dimensionality and what governs the dimensionality effect remain controversial. Here, we experimentally demonstrate a robust 3 × 3 CDW phase in both freestanding and substrate-supported bilayer NbSe, far above the bulk transition temperature.

Valence-skipping and quasi-two-dimensionality of superconductivity in a van der Waals insulator.

Valence fluctuation of interacting electrons plays a crucial role in emergent quantum phenomena in correlated electron systems. The theoretical rationale is that this effect can drive a band insulator into a superconductor through charge redistribution around the Fermi level. However, the root cause of such a fluctuating leap in the ionic valency remains elusive.

Hidden spin-orbital texture at the [Formula: see text]-located valence band maximum of a transition metal dichalcogenide semiconductor.

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the p-derived bulk valence bands of semiconducting 1T-HfSe possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the c-axis.

Above-ordering-temperature large anomalous Hall effect in a triangular-lattice magnetic semiconductor.

While anomalous Hall effect (AHE) has been extensively studied in the past, efforts for realizing large Hall response have been mainly limited within intrinsic mechanism. Lately, however, a theory of extrinsic mechanism has predicted that magnetic scattering by spin cluster can induce large AHE even above magnetic ordering temperature, particularly in magnetic semiconductors with low carrier density, strong exchange coupling, and finite spin chirality. Here, we find out a new magnetic semiconductor EuAs, where Eu ions with large magnetic moments form distorted triangular lattice.

Spin-Orbit-Induced Ising Ferromagnetism at a van der Waals Interface.

Magnetocrystalline anisotropy, a key ingredient for establishing long-range order in a magnetic material down to the two-dimensional (2D) limit, is generally associated with spin-orbit interaction (SOI) involving a finite orbital angular momentum. Here we report strong out-of-plane magnetic anisotropy without orbital angular momentum, emerging at the interface between two different van der Waals (vdW) materials, an archetypal metallic vdW material NbSe possessing Zeeman-type SOI and an isotropic vdW ferromagnet VSe. We found that the Zeeman SOI in NbSe induces robust out-of-plane magnetic anisotropy in VSe down to the 2D limit with a more than 2-fold enhancement of the transition temperature.

Patterns and driving forces of dimensionality-dependent charge density waves in 2H-type transition metal dichalcogenides.

Charge density wave (CDW) is a startling quantum phenomenon, distorting a metallic lattice into an insulating state with a periodically modulated charge distribution. Astonishingly, such modulations appear in various patterns even within the same family of materials. Moreover, this phenomenon features a puzzling diversity in its dimensional evolution.

Anisotropic Quantum Transport through a Single Spin Channel in the Magnetic Semiconductor EuTiO.

Magnetic semiconductors are a vital component in the understanding of quantum transport phenomena. To explore such delicate, yet fundamentally important, effects, it is crucial to maintain a high carrier mobility in the presence of magnetic moments. In practice, however, magnetization often diminishes the carrier mobility.

Bulk Rashba Semiconductors and Related Quantum Phenomena.

Bithmuth tellurohalides BiTeX (X = Cl, Br and I) are model examples of bulk Rashba semiconductors, exhibiting a giant Rashba-type spin splitting among their both valence and conduction bands. Extensive spectroscopic and transport experiments combined with the state-of-the-art first-principles calculations have revealed many unique quantum phenomena emerging from the bulk Rashba effect in these systems. The novel features such as the exotic inter- and intra-band optical transitions, enhanced magneto-optical response, divergent orbital dia-/para-magnetic susceptibility and helical spin textures with a nontrivial Berry's phase in the momentum space are among the salient discoveries, all arising from this effect.

Critical enhancement of thermopower in a chemically tuned polar semimetal MoTe.

Ferroelectrics with spontaneous electric polarization play an essential role in today's device engineering, such as capacitors and memories. Their physical properties are further enriched by suppressing the long-range polar order, as exemplified by quantum paraelectrics with giant piezoelectric and dielectric responses at low temperatures. Likewise in metals, a polar lattice distortion has been theoretically predicted to give rise to various unusual physical properties.

Enhanced thermopower in ZnO two-dimensional electron gas.

Control of dimensionality has proven to be an effective way to manipulate the electronic properties of materials, thereby enabling exotic quantum phenomena, such as superconductivity, quantum Hall effects, and valleytronic effects. Another example is thermoelectricity, which has been theoretically proposed to be favorably controllable by reducing the dimensionality. Here, we verify this proposal by performing a systematic study on a gate-tuned 2D electron gas (2DEG) system formed at the surface of ZnO.

Carrier-Density Control of the SrTiO3 (001) Surface 2D Electron Gas studied by ARPES.

The origin of the 2D electron gas (2DEG)stabilized at the bare surface of SrTiO3 (001) is investigated. Using high-resolution angle-resolved photoemission and core-level spectroscopy, it is shown conclusively that this 2DEG arises from light-induced oxygen vacancies. The dominant mechanism driving vacancy formation is identified, allowing unprecedented control over the 2DEG carrier density.

Coexistence of monochalocogen and dichalocogen ions in BiSe2 and BiS2 crystals prepared at high pressure.

A single crystal of bismuth diselenide, BiSe2, containing both monochalcogen (Se(2-)) and dichalcogen (Se2(2-)) ions, was prepared at a high pressure of 5.5 GPa. Its crystal structure, substitution chemistry, and physical properties were investigated.

Giant thermoelectric effect in graphene-based topological insulators with heavy adatoms and nanopores.

Designing thermoelectric materials with high figure of merit ZT = S(2)GT/Ktot requires fulfilling three often irreconcilable conditions, that is, the high electrical conductance G, small thermal conductance Ktot, and high Seebeck coefficient S. Nanostructuring is one of the promising ways to achieve this goal as it can substantially suppress lattice contribution to Ktot. However, it may also unfavorably influence the electronic transport in an uncontrollable way.

Theory of topological quantum phase transitions in 3D noncentrosymmetric systems.

We construct a general theory describing the topological quantum phase transitions in 3D systems with broken inversion symmetry. While the consideration of the system's codimension generally predicts the appearance of a stable metallic phase between the normal and topological insulators, it is shown that a direct topological phase transition between two insulators is also possible when an accidental band crossing occurs along directions with high crystalline symmetry. At the quantum critical point, the energy dispersion becomes quadratic along one direction while the dispersions along the other two orthogonal directions are linear, which manifests the zero chirality of the band touching point.

Topological protection of bound states against the hybridization.

Topological invariants are conventionally known to be responsible for protection of extended states against disorder. A prominent example is the presence of topologically protected extended states in two-dimensional quantum Hall systems as well as on the surface of three-dimensional topological insulators. Here we introduce a new concept that is distinct from such cases-the topological protection of bound states against hybridization.

High-pressure phases of hydrogen cyanide: formation of hydrogenated carbon nitride polymers and layers and their electronic properties.

We have performed a set of first-principles simulations to consider the possible phase transitions in molecular crystals of HCN under high pressure. Our calculations reveal several transition paths from the orthorhombic phase to tetragonal and then to triclinic phases. The transitions from the orthorhombic to the tetragonal phases are of the second order, whereas those from the tetragonal to the triclinic phases turn out to be of the first-order type and characterized by an abrupt decrease in volume.