Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications.

Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm) and enhanced charge mobilities (18 cm V s). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes.

A low-order unstructured-mesh approach for computational electromagnetics in the time domain.

Maxwell's curl equations in the time domain are solved using an explicit linear finite-element approach implemented on unstructured tetrahedral meshes. For the simulation of scattering problems, a perfectly matched layer is added at the artificial far-field boundary, created by the truncation of the physical domain prior to the numerical solution. The complete solution procedure is parallelized.