Vermicompost application improves leaf physiological activity, 2-acetyl-1-pyrroline, and grain yield of fragrant rice through efficient nitrogen assimilation under Cd stress.

Cadmium (Cd) pollution in arable soils and its accumulation in rice plants have become a global concern because of their harmful effects on crop yield and human health. The stabilization method which involves the application of organic amendments such as vermicompost (VC), is frequently utilized for the remediation of Cd-contaminated soils. This study investigated the effects of VC on the soil chemical properties and the physio-biochemical functions of fragrant rice, as well as nitrogen (N) metabolism and assimilatory enzyme activities, 2-acetyl-1-pyrroline (2AP) content in rice grains, and the grain yields of fragrant rice cultivars, i.

Novel pyridine isonicotinoyl hydrazone derivative: synthesis, complexation and investigation for decontamination of DR-81 from wastewater.

Herein, novel aroylhydrazone (/)-'-((3-methylpyridin-2-yl)methylene)isonicotinohydrazide ligand (MPIH) 3 and its Zn(ii)-MPIH complex 4 were synthesized and investigated to adsorb direct red 81 dye (DR-81) from aqueous media. MPIH was synthesized by the condensation reaction of isonicotinohydrazide with 3-methylpicolinaldehyde 2, then performed in a basic medium with zinc chloride to form Zn(ii)-MPIH complex. The synthesized MPIH ligand 3 and Zn(ii)-MPIH complex 4 were further characterized proton nuclear magnetic resonance (H NMR), C nuclear magnetic resonance, Fourier transform infrared spectroscopy (FT-IR), UV-visible, mass spectra analysis (EI MS), and elemental analysis.

Response of Canola productivity to integration between mineral nitrogen with yeast extract under poor fertility sandy soil condition.

Canola is one of the important oil crops and is considered the most promising oil source and adapts to reclaimed soil conditions. The current study aimed to evaluate the influence of yeast extract (YE) integrated with nitrogen (N) rates and treatments were arranged as follows: Control (without F0), 95 kg N ha (F1), 120 kg N ha (F2), 142 kg N ha (F3), 95 kg N ha + YE (F4), 120 kg N ha + YE (F5) and 142 kg N ha + YE (F6) on physico-chemical properties, yield and its components for three Canola genotypes i.e.

Impact of Green Chitosan Nanoparticles Fabricated from Shrimp Processing Waste as a Source of Nano Nitrogen Fertilizers on the Yield Quantity and Quality of Wheat ( L.) Cultivars.

Waste from crustaceans has adverse effects on the environment. In this respect, shrimp waste was valorized for producing chitosan nanoparticles as a source for eco-friendly nano-nitrogen fertilizer. The application of nano-nitrogen fertilizers is a valuable alternative approach in agriculture due to its potential for reducing the application of mineral nitrogen fertilizers and increasing yield quality and quantity, thereby helping to reduce the worldwide food shortage.

A Hierarchical 3D TiO /Ni Nanostructure as an Efficient Hole-Extraction and Protection Layer for GaAs Photoanodes.

Photoelectrochemical (PEC) water splitting is a promising clean route to hydrogen fuel. The best-performing materials (III/V semiconductors) require surface passivation, as they are liable to corrosion, and a surface co-catalyst to facilitate water splitting. At present, optimal design combining photoelectrodes with oxygen evolution catalysts remains a significant materials challenge.

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions.

InGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three axial heterojunction structures were constructed with different doping types and levels, namely n-InGaN/n-GaN NWs, undoped (u)-InGaN/p-GaN NWs, and p-InGaN/p-GaN NWs.

Flexible InGaN nanowire membranes for enhanced solar water splitting.

III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires.

Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting.

Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency.

Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission.

We report on the fabrication of novel InGaN nanowires (NWs) with improved crystalline quality and high radiative efficiency for applications as nanoscale visible light emitters. Pristine InGaN NWs grown under a uniform In/Ga molar flow ratio (UIF) exhibited multi-peak white-like emission and a high density of dislocation-like defects. A phase separation and broad emission with non-uniform luminescent clusters were also observed for a single UIF NW investigated by spatially resolved cathodoluminescence.

Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector.

Laser operation of a GaN vertical cavity surface emitting laser (VCSEL) is demonstrated under optical pumping with a nanoporous distributed Bragg reflector (DBR). High reflectivity, approaching 100%, is obtained due to the high index-contrast of the nanoporous DBR. The VCSEL system exhibits low threshold power density due to the formation of high Q-factor cavity, which shows the potential of nanoporous medium for optical devices.

Fabrication of vertical light emitting diode based on thermal deformation of nanoporous GaN and removable mechanical supporter.

A GaN vertical light emitting diode (LED) based on the novel lift-off method was demonstrated by high temperature regrowth over nanoporous (NP) GaN template formed by electrochemical (EC) etching. A two-step EC etching process was employed on a SiO2 patterned GaN surface to fabricate a nanoporous template with a controlled porosity profile, which enabled better structural stability than a single NP GaN. During the regrowth of LED structures, the high porosity GaN layer produced large coalesced voids due to the thermal deformation of nanopores.