Gel-Based PVA/SiO/p-Si Heterojunction for Electronic Device Applications.

The current work presents a new structure based on Au/PVA/SiO/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO/Si using the spin-coating technique. The silicon wafer was left to be oxidized in a furnace at 1170 k for thirty minutes, creating an interdiffusion layer of SiO.