This study describes a method by which to synthesize SiO-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The SGB was synthesized using APCVD, which was optimized using the Taguchi method.
View Article and Find Full Text PDFVertically standing MoS nanoflakes are favourable in applications such as energy storage devices, hydrogen evolution reactions, and gas sensors due to their large surface area and high density of exposed edges. In this work, we report the effect of Mo vapor concentration on the morphology of vertical MoS nanoflakes prepared by chemical vapor deposition at atmospheric pressure. A series of MoS samples were grown under different Mo vapor concentrations by varying the separation distance (x) between the MoO source and the substrate.
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