An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors.

A physics-based model on polarization switching in ferroelectric polycrystalline films is proposed. The calculation results by the model agree well with experimental results regarding dynamic operations of ferroelectric-gate field-effect transistors (FeFETs). In the model, an angle for each grain in the ferroelectric polycrystal is defined, where is the angle between the spontaneous polarization and the film normal direction.

Area-Scalable 10-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process.

Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process. They had metal/ferroelectric/insulator/semiconductor stacked-gate structures of Ir/SBT/HfO/Si. In the fabrication process, we prepared dummy-gate transistor patterns and then replaced the dummy substances with an SBT precursor.

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaSrBi₂Ta₂O₉/Hf⁻Al⁻O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors.

Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline CaSrBi₂Ta₂O₉ (CSBT) films in ferroelectric-gate field-effect transistors (FeFETs). The CSBT FeFETs with = 0, 0.1, 0.

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory.

We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi₂Ta₂O₉/(HfO₂)(Al₂O₃) (Hf-Al-O) and Pt/SrBi₂Ta₂O₉/HfO₂ gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 10⁶ after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 10⁵. A fabricated self-aligned gate Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si FET revealed a sufficiently large drain current ratio of 2.