E-beam synthesized fast-switching TiO/SnO type-II heterostructure photodetector.

A fast-switching / heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted.

Enhanced Photodetection in Glancing Angle Deposited One-Dimensional In₂O₃ Nanorod Array.

Glancing angle deposition (GLAD) oriented electron beam (e-beam) evaporation process has been employed to develop 1D In₂O₃ nanorod array over -Si substrate. The morphology of as-deposited In₂O₃ thin film (∼70 nm) and GLAD 1D In₂O₃ nanorod array (∼400 nm) were explored using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM) analysis. The structural analysis were perceived by high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques.

Bandgap Modulation of Glancing Angle Deposition Aided Ag Nanoparticles Covered TiO₂ Thin Film by High Temperature Annealing.

Glancing Angle Deposition (GLAD) technique has been used to fabricate the Ag nanoparticles (NPs) over TiO₂ thin film (TF) on the -Si substrate. The deposited Ag NPs are in the size of 3-5 nm. Open-air annealing has been done at 500 °C and 600 °C for the -Si/TiO₂ TF/Ag NP samples.

Enhanced Photodetection with Crystalline Si Nanoclusters.

SiO nanodots were fabricated on a TiO₂ thin film using glancing angle deposition technique. The fabricated samples were annealed at 950 °C in open air configuration to obtain Si nanoclusters resulting from phase separation of SiO nanodots. Field Emission Gun Scanning electron microscopy and atomic force microscopy were used to examine the topography of the samples.

Improved UV Photodetection by Indium Doped TiO₂ Thin Film Based Photodetector.

Indium (In) was doped into TiO2 thin film (TF) using the electron beam evaporation technique followed by an annealing process. The high resolution X-ray diffraction (HRXRD) analysis revealed lower angle diffraction peak (2) shifting of Rutile (002) phases of TiO2 from 61.9 to 61.