Luminescence Properties of Epitaxial CuO Thin Films Electrodeposited on Metallic Substrates and CuO Single Crystals.

The luminescent properties of epitaxial CuO thin films were studied in 10-300 K temperature range and compared with the luminescent properties of CuO single crystals. CuO thin films were deposited epitaxially via the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships. CuO (100) and (111) single crystal samples were cut from a crystal rod grown using the floating zone method.

Electronic and Optical Properties of Rocksalt MgZnO and Wurtzite ZnMgO with Varied Concentrations of Magnesium and Zinc.

The structural, electronic and optical properties of rocksalt Mg1-xZnxO and wurtzite Zn1-xMgxO with the concentration of Zn and Mg varying from 0.125 to 0.875 were investigated using density functional theory (DFT), DFT+U, linear response theory and the Bethe-Salpeter equation.

Influence of Stress on Electronic and Optical Properties of Rocksalt and Wurtzite MgO-ZnO Nanocomposites with Varying Concentrations of Magnesium and Zinc.

The structural, electronic and optical properties of stressed MgO-ZnO nanocomposite alloys with concentrations of Zn and Mg varying from 0.125 to 0.875 were studied using ab initio simulations.

Robustness of a Topologically Protected Surface State in a SbTeSe Single Crystal.

A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline SbTeSe single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the SbTeSe compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands.

P-wave-enhanced spin field effect transistor and recent patents.

P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys.