The effect of Ga content on In₂xGa₂-₂xO₃ nanowire transistor characteristics.

We have investigated the change in structural and electrical properties of In(2x)Ga(2-2x)O(3) nanowires (x = 1, 0.69 and 0.32) grown with varied indium (In) and gallium (Ga) contents.

A nanowire-based shift register for display scan drivers.

The development of display scan drivers is an essential step in the effort to develop transparent and flexible display devices based on nanowire transistors. Here we report a transparent nanowire-based shift register that functions as the standard logic circuit of a display scan driver. To form the shift register circuits using only n-type nanowire transistors, a novel circuit structure was introduced to avoid the output voltage drop typical of purely n-type circuits.