Optimum Contact Configurations for Quasi-One-Dimensional Phosphorene Nanodevices.

We employ atomistic quantum transport simulations based on non-equilibrium Green's function (NEGF) formalism of quasi-one-dimensional (quasi-1D) phosphorene, or phosphorene nanoribbons (PNRs), to explore routes towards minimizing contact resistance () in devices based on such nanostructures. The impact of PNR width scaling from ~5.5 nm down to ~0.

Naphthalimide-Piperazine Derivatives as Multifunctional "On" and "Off" Fluorescent Switches for pH, Hg and Cu Ions.

Novel 1,8-naphthalimide-based fluorescent probes and were designed and screened for use as chemosensors for detection of heavy metal ions. Two moieties, methylpyridine () and hydroxyphenyl (), were attached via piperazine at the C-4 position of the napthalimide core resulting in a notable effect on their spectroscopic properties. and are pH sensitive and show an increase in fluorescence intensity at around 525 nm (switch "on") in the acidic environment, with p values at 4.

Lower Limits of Contact Resistance in Phosphorene Nanodevices with Edge Contacts.

Edge contacts are promising for improving carrier injection and contact resistance in devices based on two-dimensional (2D) materials, among which monolayer black phosphorus (BP), or phosphorene, is especially attractive for device applications. Cutting BP into phosphorene nanoribbons (PNRs) widens the design space for BP devices and enables high-density device integration. However, little is known about contact resistance () in PNRs with edge contacts, although is the main performance limiter for 2D material devices.

Bandstructure and Size-Scaling Effects in the Performance of Monolayer Black Phosphorus Nanodevices.

Nanodevices based on monolayer black phosphorus or phosphorene are promising for future electron devices in high density integrated circuits. We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using advanced theoretical and computational approaches. Material and device properties are obtained by non-equilibrium Green's function (NEGF) formalism combined with a novel tight-binding (TB) model fitted on ab initio density-functional theory (DFT) calculations.

Correction: Poljak, M.; Matić, M. Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts. 2021, , 3670.

The authors regret that the results presented in Figure 3c,d and Figure 6c,d in our published paper [...

Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts.

Graphene has attracted a lot of interest as a potential replacement for silicon in future integrated circuits due to its remarkable electronic and transport properties. In order to meet technology requirements for an acceptable bandgap, graphene needs to be patterned into graphene nanoribbons (GNRs), while one-dimensional (1D) edge metal contacts (MCs) are needed to allow for the encapsulation and preservation of the transport properties. While the properties of GNRs with ideal contacts have been studied extensively, little is known about the electronic and transport properties of GNRs with 1D edge MCs, including contact resistance (), which is one of the key device parameters.