Low temperature 2D GaN growth on Si(111) 7 × 7 assisted by hyperthermal nitrogen ions.

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level.

Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors.

Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO) layer.

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity.

The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer-Emmett-Teller (BET) model of water condensation and electron hopping can provide the information concerning the resistivity of low conductive surfaces and their water coverage. This is enabled by a study of charge transport between isolated and grounded graphene sheets on a silicon dioxide surface at different relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In the experimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy (AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM.

Nanometer-Sized Water Bridge and Pull-Off Force in AFM at Different Relative Humidities: Reproducibility Measurement and Model Based on Surface Tension Change.

This article deals with the analysis of the relationship between the pull-off force measured by atomic force microscopy and the dimensions of water bridge condensed between a hydrophilic silicon oxide tip and a silicon oxide surface under ambient conditions. Our experiments have shown that the pull-off force increases linearly with the radius of the tip and nonmonotonically with the relative humidity (RH). The latter dependence generally consists of an initial constant part changing to a convex-concave-like increase of the pull-off force and finally followed by a concave-like decrease of this force.

Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)).

Ultrasmooth metallic foils for growth of high quality graphene by chemical vapor deposition.

Synthesis of graphene by chemical vapor deposition is a promising route for manufacturing large-scale high-quality graphene for electronic applications. The quality of the employed substrates plays a crucial role, since the surface roughness and defects alter the graphene growth and cause difficulties in the subsequent graphene transfer. Here, we report on ultrasmooth high-purity copper foils prepared by sputter deposition of Cu thin film on a SiO2/Si template, and the subsequent peeling off of the metallic layer from the template.

Selective growth of metallic nanostructures on surfaces patterned by AFM local anodic oxidation.

We report on an alternative approach for the fabrication of metallic nanostructures: a selective growth on silicon substrates patterned by local anodic oxidation using atomic force microscopy. Our method represents a maskless, four-step process which combines a top-down and bottom-up approach. The dimensions of both the oxide lines and metallic elements can be controlled during the technological process.