Field-Assisted Sintering/Spark Plasma Sintering of Gadolinium-Doped Ceria with Controlled Re-oxidation for Crack Prevention.

Gadolinium-Doped Ceria (GDC) is a prospective material for application in electrochemical devices. Free sintering in air of GDC powder usually requires temperatures in the range of 1400 to 1600 °C and dwell time of several hours. Recently, it was demonstrated that sintering temperature can be significantly decreased, when sintering was performed in reducing atmosphere.

In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min.

Hot-wire chemical vapor deposition was used to deposit in situ-doped amorphous silicon layers for poly-Si/SiO passivating contacts at a high deposition rate of 42 nm/min. We investigated the influence of a varied phosphine gas (PH) concentration during deposition on (i) the silicon film properties and (ii) the passivating contact performances. The microstructural film properties were characterized before and after a high-temperature crystallization step to transform amorphous silicon films into polycrystalline silicon films.

Increasing Fracture Toughness and Transmittance of Transparent Ceramics using Functional Low-Thermal Expansion Coatings.

Transparent polycrystalline ceramics have the potential to enable applications no other materials can, but to do so their strength and toughness must be improved. However, surface strengthening treatments like those used for glasses have so far remained elusive. Here for the first time, we report on engineering unprecedented surface compression, of the magnitude achieved for ion-exchange strengthened glasses (~750 MPa) in transparent ceramics.