Controlling Magnetoresistance by Oxygen Impurities in Mq3-Based Molecular Spin Valves.

The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. Although carrier concentration may play an essential role in spin transport in these devices, direct experimental evidence of its importance is lacking. We probed the role of the charge carrier concentration by studying the interplay between MR and multilevel resistive switching in OSVs.

High-Performance Mixed-Signal Neurocomputing With Nanoscale Floating-Gate Memory Cell Arrays.

Potential advantages of analog- and mixed-signal nanoelectronic circuits, based on floating-gate devices with adjustable conductance, for neuromorphic computing had been realized long time ago. However, practical realizations of this approach suffered from using rudimentary floating-gate cells of relatively large area. Here, we report a prototype $28\times28$ binary-input, ten-output, three-layer neuromorphic network based on arrays of highly optimized embedded nonvolatile floating-gate cells, redesigned from a commercial 180-nm nor flash memory.

Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.

Nanoparticles (NPs) embedded in a conductive or insulating matrix play a key role in memristors and in flash memory devices. However, the role of proximity to the interface of isolated NPs has never been directly observed nor fully understood. Here we show that a reversible local switching in tunnel conductivity can be achieved by applying an appropriate voltage pulse using the tip of a scanning tunnelling microscope on NPs embedded in a TiO2 matrix.

A single-device universal logic gate based on a magnetically enhanced memristor.

Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.

Regenerable resistive switching in silicon oxide based nanojunctions.

A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.