Work function of organometallic halide perovskite (OHP) films is one of the most crucial photoelectric properties, which dominates the carrier dynamics in OHP-based devices. Despite surface treatments by additives being widely used to promote crystallization and passivate defects in OHP films, these chemical strategies for modulation of work functions face two trade-offs: homogeneity on the surface versus along the thickness; the range versus the accuracy of modulation. Herein, by using ferroelectric substrates of uniform polarization and subnanometer roughness, homogeneous CHNHPbI films are fabricated with five states of work functions with large spanning (∼0.
View Article and Find Full Text PDFTwo-dimensional (2D) materials with competing polymorphs offer remarkable potential to switch the associated 2D functionalities for novel device applications. Probing their phase transition and competition mechanisms requires nanoscale characterization techniques that can sensitively detect the nucleation of secondary phases down to single-layer thickness. Here we demonstrate nanoscale phase identification on 2D InSe polymorphs, utilizing their distinct plasmon energies that can be distinguished by electron energy-loss spectroscopy (EELS).
View Article and Find Full Text PDFIn self-intercalated two-dimensional (ic-2D) materials, understanding the local chemical environment and the topology of the filling site remains elusive, and the subsequent correlation with the macroscopically manifested physical properties has rarely been investigated. Herein, highly crystalline gram-scale ic-2D TaS crystals were successfully grown by the high-pressure high-temperature method. Employing combined atomic-resolution scanning transmission electron microscopy annular dark field imaging and density functional theory calculations, we systematically unveiled the atomic structures of an atlas of stacking registries in a well-defined √3(a) × √3(a) TaS superlattice.
View Article and Find Full Text PDFTwo-dimensional ferroelectric tunnel junctions (2D FTJs) with an ultrathin van der Waals ferroelectrics sandwiched by two electrodes have great applications in memory and synaptic devices. Domain walls (DWs), formed naturally in ferroelectrics, are being actively explored for their low energy consumption, reconfigurable, and non-volatile multi-resistance characteristics in memory, logic and neuromorphic devices. However, DWs with multiple resistance states in 2D FTJ have rarely been explored and reported.
View Article and Find Full Text PDFTwo-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric InSe films by selenization of InO in a confined space chemical vapor deposition method.
View Article and Find Full Text PDFMultiferroic tunneling junctions (MFTJs), composed of two magnetic electrodes separated by an ultrathin ferroelectric (FE) thin film as a barrier, have received great attention in multi-functional devices. Recent theoretical and experimental works have revealed that ferroelectric polarization exists at room temperature in two-dimensional ferroelectric (2D FE) materials within the ultrathin thickness. Here we propose a novel MFTJ Ni/bilayer InSe/BN/Ni, in which the resistance of the tunneling spin polarization electrons can be modulated by different magnetization alignments of the electrode and electric polarization direction of the 2D FE InSe layer, leading to multiple tunneling resistance states.
View Article and Find Full Text PDFObjective: Colorectal cancer is a common malignancy worldwide. This research aimed to investigate the role of α-ketoglutarate-dependent dioxygenase alkB homologue 5 (ALKBH5), a N-methyladenosine (m(6)A) demethylase, on the cell proliferation and metastasis of colorectal cancer.
Methods: The interaction relationship between FOXO3, miR-21, and SPRY2 were predicted by starBase 2.