Growth of In-catalyzed silicon nanostructures by hydrogen radical-assisted deposition method: effect of substrate temperatures.

Indium (In) catalyzed silicon nanowires were synthesized by the hydrogen radical-assisted deposition method. The In nanoparticles used as catalyst were fabricated from indium oxide film as metal oxide film at various temperatures by hydrogen radical treatment. The sizes of spherical structure were decreased with increasing hydrogen radical treatment temperatures.

Investigation on the surface passivation of intrinsic a-Si:H thin films prepared by inductively coupled plasma-chemical vapor deposition for heterojunction solar cell applications.

Intrinsic a-Si:H thin films, which can have passivation functions on the surface of crystalline Si, were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD). The properties of the films were investigated at deposition temperatures ranging from 50 to 400 degrees C. The Si--H stretching mode at 2000 cm(-1), which indicates good film quality, was found in the range of 150-400 degrees C, but the film quality was not good at deposition temperatures below 150 degrees C.

Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.

The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness.