Oxygen-Plasma-Treated Al/TaO/Al Resistive Memory for Enhanced Synaptic Characteristics.

In this study, we investigate the impact of O plasma treatment on the performance of Al/TaO/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability.

HfAlOx-based ferroelectric memristor for nociceptor and synapse functions.

Efficient data processing is heavily reliant on prioritizing specific stimuli and categorizing incoming information. Within human biological systems, dorsal root ganglions (particularly nociceptors situated in the skin) perform a pivotal role in detecting external stimuli. These neurons send warnings to our brain, priming it to anticipate potential harm and prevent injury.

Enhancing simulation feasibility for multi-layer 2D MoS RRAM devices: reliability performance learnings from a passive network model.

While two-dimensional (2D) MoS has recently shown promise as a material for resistive random-access memory (RRAM) devices due to its demonstrated resistive switching (RS) characteristics, its practical application faces a significant challenge in industry regarding its limited yield and endurance. Our earlier work introduced an effective switching layer model to understand RS behavior in both mono- and multi-layered MoS. However, functioning as a phenomenological percolation modeling tool, it lacks the capability to accurately simulate the intricate current-voltage (-) characteristics of the device, thereby hindering its practical applicability in 2D RRAM research.

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor.

Studies on neuromorphic computing systems are becoming increasingly important in the big-data-processing era as these systems are capable of energy-efficient parallel data processing and can overcome the present limitations owing to the von Neumann bottleneck. The Pt/WO/ITO resistive random-access memory device can be used to implement versatile synapse functions because it possesses both volatile and nonvolatile characteristics. The gradual increase and decrease in the current of the Pt/WO/ITO device with its uniform resistance state for endurance and retention enables additional synaptic applications that can be controlled using electric pulses.

Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO Bilayer Device.

This paper investigates the bipolar resistive switching and synaptic characteristics of IZO single-layer and IZO/SiO bilayer two-terminal memory devices. The chemical properties and structure of the device with a SiO layer are confirmed by x-ray photoemission spectroscopy (XPS) and transmission electron microscopy (TEM) imaging. The device with the SiO layer showed better memory characteristics with a low current level, as well as better cell-to-cell and cycle-to-cycle uniformity.

Effect of Pelvic Floor Muscle Training Using Pressure Biofeedback on Pelvic Floor Muscle Contraction and Trunk Muscle Activity in Sitting in Healthy Women.

Pelvic floor muscle training (PFMT) has been recommended as the first choice as one of the effective methods for preventing and improving urinary incontinence (UI). We aimed to determine whether pressure biofeedback unit training (PBUT) improves short term and retention performance of pelvic floor muscle contraction. The muscle activities of the external oblique (EO), transversus/internal oblique (TrA/IO), multifidus (MF) and the bladder base displacement were measured in the verbal feedback group (n = 10) and PBU group (n = 10) three times (baseline, post-training, and at the 1-week follow-up).