Bending elasticity of the reversible freely jointed chain.

The freely jointed chain model with reversible hinges (rFJC) is the simplest theoretical model, which captures reversible transitions of the local bending stiffness along the polymer chain backbone (e.g., helix-coil-type of local conformational changes or changes due to the binding/unbinding of ligands).

Synthesis of functional ZnO nanowall networks using simple solution etching.

We report the synthesis of high quality single crystalline ZnO nanowall networks (NNs) using ammonia solution etching of a ZnO nanowire-nanowall heterojunction (NNH) structure. Synchrotron X-ray diffraction revealed that the full-width-at-half-maximum of the ZnO (0002) peak in the ZnO NN sample was much narrower than that of the ZnO NNH sample. Temperature-dependent photoluminescence (PL) measurements revealed more intense and narrower bound exciton peak emission in the NN sample compared to that in the NNH sample.

Controlling of the electrical resistivity of GaN layer using AIN nucleation layer.

The sheet resistance (Rs) of undoped GaN films on AIN/c-plane sapphire substrate was investigated. The Rs was strongly dependent on the AIN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using X-ray scattering and transmission electron microscopy.

ZnO nanotips and nanorods on carbon nanotube/Si substrates: anomalous p-type like optical properties of undoped ZnO nanotips.

ZnO nanotips and nanorods were grown on screen-printed multi-walled carbon nanotube (MWCNT) films via thermal chemical vapor deposition at relative low growth temperatures of 400 and 500 °C. Uniform formation of ZnO nanotips and nanorods occurred on MWCNT-printed Si substrates, but were rarely observed on bare Si substrates at the same growth temperatures. In photoluminescence (PL) measurements, it was found that ZnO nanorods exhibit typical intrinsic optical properties, while ZnO nanotips revealed p-type like luminescence behavior.