High Quality Al-Polar AIN Growth on (0001) Sapphire Using Polarity-Selective Thermal Etching by High Temperature Metalorganic Chemical Vapor Deposition.

In this study, we suggest a polarity-selective in-situ thermal etching and re-growth process for the fabrication of high quality Al terminated AIN epilayers by high temperature metalorganic chemical vapor deposition. Mixed-polar AIN layers grown on a thin (5 nm) buffer layer at a high temperature (950 degrees C) exhibited high crystalline quality. Surface morphologies of in-situ thermally etched AIN layers depended on the grain size and distance between grains.

Fabrication of AIN Nano-Structures Using Polarity Control by High Temperature Metalorganic Chemical Vapor Deposition.

This study investigates the crystallographic polarity transition of AIN layers grown by high temperature metalorganic chemical vapor deposition (HT-MOCVD), with varying trimethylaluminum (TMAI) pre-flow rates. AIN layers grown without TMAI pre-flow had a mixed polarity, consisting of Al- and N-polarity, and exhibited a rough surface. With an increasing rate of TMAI pre-flow, the AIN layer was changed to an Al-polarity, with a smooth surface morphology.

Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition.

By plasma-enhanced chemical vapor deposition, a molybdenum disulfide (MoS2 ) thin film is synthesized directly on a wafer-scale plastic substrate at below 300 °C. The carrier mobility of the films is 3.74 cm(2) V(-1) s(-1) .

Controlled Layer-by-Layer Etching of MoS₂.

Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these materials at the atomic level will be a key factor in the future development of MoS2 devices. In this study, we propose a layer-by-layer removal of MoS2 using the atomic layer etching (ALET) that is composed of the cyclic processing of chlorine (Cl)-radical adsorption and argon (Ar)(+) ion-beam desorption.

Detection of albiflorin and paeoniflorin in Paeoniae radix by reversed-phase high-performance liquid chromatography with pulsed amperometric detection.

We have developed a reversed-phase high-performance liquid chromatography-pulsed amperometric detection (RP-HPLC-PAD) method for the detection of albiflorin and paeoniflorin in Paeoniae Radix and Wu-ji-san. Albiflorin and paeoniflorin were completely separated using 10% acetonitrile in 5mM sodium phosphate buffer (pH 3.0) as an eluent and detected by PAD under alkaline conditions after using a post-column delivery system.