Bismuth Vacancy-Induced Enhancement of Luminescence Intensity and Irradiation Resistance for BiGeO.

BiGeO (BGO) is a traditional scintillator, widely used in high-energy physics and nuclear medicine. However, it not only suffers from low scintillation intensity but also tends to be damaged by high-energy rays. Herein, we prepare pure-phase BGO materials enriched with Bi vacancies by rationally reduced Bi content, showing significantly enhanced luminescence intensity and irradiation resistance ability.

Dual-ion substituted (MeY)(AlSi)O:Eu garnet phosphors: combinatorial screening, reductive annealing, and luminescence property.

In recent years, the efficiency of combinatorial methods has been utilized to accelerate the finding or screening of inorganic materials. In this work, based on the double substitution strategy of the cation ions Me/Si, a series of Me Y Al Si O:Eu garnet phosphors (MeYASG:Eu, Me = Mg, Ca, Sr, Ba) were rapidly prepared and screened by a combinatorial method in microreactor arrays. Through parallel experiments of solid-state synthesis, the reliability of the combinatorial screening was verified and an optimal composition of CaYAlSiO:Eu (CYASG:Eu) with advanced luminous intensity was obtained.

Multi-channel fiber optical spectrometer for high-throughput characterization of photoluminescence properties.

High-throughput experiment can significantly accelerate the materials research efficiency. Thanks to national efforts, the Materials Genome Initiative further promotes the development of high-throughput experimental technology. A multi-channel fiber optical spectrometer has been designed and developed by us for high-throughput characterization of photoluminescence (PL) properties.

Modulating trap properties by Nd- Eu co-doping in SrSnO host for optical information storage.

We report a novel Nd and Eu co-doped SrSnO (SSONE) phosphor showing the capability of "write-in" and "read-out" in optical information storage. As-prepared phosphors exhibit a dominant emission (PL) band centered at 596 nm under UV excitation, closely identical with its photo-stimulated luminescence (PSL) spectrum center (595 nm) upon near-infrared (NIR) light and thermal-stimulated luminescence (TSL) spectrum center (595 nm) under heat source. Remarkably, compared with Eu single-doped phosphors, the co-doping strategy enhances the deep traps and also separates the deep traps with shallow traps, which are very crucial factors for optical information storage in electron trapping materials.