In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition.

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl) and methane (CH) as precursors, along with nitrogen (N) as a dopant. We investigated the effect of the volume fraction of nitrogen () on the preferred orientation, microstructure, electrical conductivity (), deposition rate (), and optical transmittance.

Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD.

Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl₄) and methane (CH₄) as precursors. The effects of deposition temperature () and total pressure () on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced by T.

Automated segmentation of mammary gland regions in non-contrast X-ray CT images.

The identification of mammary gland regions is a necessary processing step during the anatomical structure recognition of human body and can be expected to provide useful information for breast tumor diagnosis. This paper proposes a fully automated scheme for segmenting the mammary gland regions in non-contrast torso CT images. This scheme calculates the probability of each voxel belonging to the mammary gland or chest muscle in CT images as the reference of the segmentation, and decides the mammary gland regions based on CT number automatically.