Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe-CrI Heterojunction.

Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI-WSe-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI-FLG-hBN heterostructure was also fabricated on identical CrI and FLGs for better comparison.

P/N-Type Conversion of 2D MoTe Controlled by Top Gate Engineering for Logic Circuits.

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration.

Nanoscale Channel Length MoS Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes.

Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated.

Determination of Trace Thorium and Uranium Impurities in Scandium with High Matrix by ICP-OES.

High-purity scandium oxide is the principal raw material of high-purity scandium metal and aluminum scandium alloy targets for electronic materials. The performance of electronic materials will be significantly impacted by the presence of trace amounts of radionuclides due to the increase in free electrons. However, about 10 ppm of Th and 0.

Light helicity detector based on 2D magnetic semiconductor CrI.

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI devices.

The Policy Information Gap and Resettlers' Well-Being: Evidence from the Anti-Poverty Relocation and Resettlement Program in China.

The widespread dissemination of policy information is necessary for the success of the public policy, but the distribution of information among vulnerable groups has received little attention. We examined a public policy that focuses on the poorest people in China, the anti-poverty relocation and settlement program (ARSP). The infrastructure in the region where the policy is implemented is weak, and the information literacy of resettlers is low.