Lanthanide-Like Contraction Enables the Fabrication of High-Purity Selenium Films for Efficient Indoor Photovoltaics.

The lanthanide contraction involves a reduction in atomic radius among f-block elements below the expected level. A similar contraction is observed in group-16 elements. The atomic radius of Se (117 pm) is slightly larger than that of S (104 pm) arising from the presence of d electrons, compared to the significant increase in atomic radius from O (73 pm) to S.

Sustainable Recycling of Selenium-Based Optoelectronic Devices.

Selenium (Se), the world's oldest optoelectronic material, has been widely applied in various optoelectronic devices such as commercial X-ray flat-panel detectors and photovoltaics. However, despite the rare and widely-dispersed nature of Se element, a sustainable recycling of Se and other valuable materials from spent Se-based devices has not been developed so far. Here a sustainable strategy is reported that makes use of the significantly higher vapor pressure of volatile Se compared to other functional layers to recycle all of them from end-of-life Se-based devices through a closed-space evaporation process, utilizing Se photovoltaic devices as a case study.

Structure of Amorphous Selenium: Small Ring, Big Controversy.

Selenium (Se) discovered in 1817 belongs to the family of chalcogens. Surprisingly, despite the long history of over two centuries and the chemical simplicity of Se, the structure of amorphous Se (a-Se) remains controversial to date regarding the dominance of chains versus rings. Here, we find that vapor-deposited a-Se is composed of disordered rings rather than chains in melt-quenched a-Se.

Indoor photovoltaics awaken the world's first solar cells.

Selenium (Se) solar cells were the world's first solid-state photovoltaics reported in 1883, opening the modern photovoltaics. However, its wide bandgap (~1.9 eV) limits sunlight harvesting.

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics.

Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge(ii)-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge(ii) to Ge(iv) in the precursor solution. Here we report solution-processed deposition of Ge(ii)-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid.

Investigation of the sublimation mechanism of GeSe and GeS.

GeSe and GeS have emerged as promising light-harvesting materials for photovoltaics due to their attractive optoelectronic properties, non-toxic and earth-abundant constituents, and excellent stability. Here we unveil the diatomic molecule sublimation mechanism of GeSe and GeS that directly guides the optimization of GeSe and GeS solar-cell fabricated the close-space sublimation method.

Surface-Defect States in Photovoltaic Absorber GeSe.

GeSe is an emerging promising light-harvesting material for photovoltaics due to its excellent optoelectronic properties, nontoxic and earth-abundant constituents, and high stability. In particular, perovskite-like antibonding states at the valence band maximum arising from Ge-4s and Se-4p coupling enable the bulk-defect-tolerant properties in GeSe. However, a fundamental understanding of surface-defect states in GeSe, another important factor for high-performance photovoltaics, is still lacking.

Delamination and Engineered Interlayers of TiC MXenes using Phosphorous Vapor toward Flame-Retardant Epoxy Nanocomposites.

As recently created inorganic nanosheet materials, more and more light has been shed on MXenes, which have emerged as a hotspot of intensive investigations. The simple exfoliation method for MXenes attracts numerous studies to pay efforts on. Compared with the extensive research about ultrasonication and mechanical milling, gas-assisted exfoliation has never been carried out for MXenes.

Applicability of boosting techniques in calibrating safety performance functions for freeways.

Safety performance functions (SPFs) are indispensable analytical tools that usually play a crucial role in estimating crash frequencies, identifying hotspots, analyzing crash contributing factors, and assessing the effectiveness of safety countermeasures. Due to the limited availability of safety data, municipalities tended to adopt SPFs from Highway Safety Manual or other neighboring jurisdictions. Recently, boosting algorithms have been frequently exploited for data analysis and statistical regression modeling problems.

Interfacial Strain Engineering in Wide-Bandgap GeS Thin Films for Photovoltaics.

Wide-bandgap semiconductors exhibiting a bandgap of ∼1.7-1.9 eV have generated great interest recently due to their important applications in tandem solar cells as top cells and emerging indoor photovoltaics.

Virtual simulation of otolith movement for the diagnosis and treatment of benign paroxysmal positional vertigo.

Benign paroxysmal positional vertigo (BPPV) is a clinical condition. The existing diagnostic methods cannot determine the specific location of otolith on the short or long brachial sides. Thus, visual and quantitative evaluation of the existing clinical standard diagnostic modality Dix-Hallpike test is needed to improve medical efficiency.

Transferability of safety performance functions and hotspot identification for freeways of the United States and China.

Safety performance function (SPF) has been a vital tool in traffic safety evaluation including finding contributing factors to crashes, identifying hotspots, and assessing safety effects of countermeasures. In the United States (U.S.

Freeway single and multi-vehicle crash safety analysis: Influencing factors and hotspots.

Single-vehicle (SV) and multi-vehicle (MV) crashes have been recognized as differing in spatial distribution and influencing factors, but little consideration has been given to these differences as related to hotspot identification. For the purpose of better hotspot identification, this study aims to analyze influencing factors of SV and MV crashes and to explore the consistency between SV and MV hotspots. Crash data, roadway geometric design features, and traffic characteristics were collected along the two directions of a 45-km freeway section in Shanghai, China.