Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement.

Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (). Numerical calculation shows that the number of bond wire liftoffs will change the , which can be used as an effective bond wire damage precursor.