Wafer-Scale Fabrication of Wearable All-Carbon Nanotube Photodetector Arrays.

With electronic devices evolving toward portable and high-performance wearables, the constraints of complex and wet processing technologies become apparent. This study presents a scalable photolithography/chemical-free method for crafting wearable all-carbon nanotube (CNT) photodetector device arrays. Laser-assisted patterning and dry deposition techniques directly assemble gas-phase CNTs into flexible devices without any lithography or lift-off processes.

Highly Sensitive MoS Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode.

Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film.

Deterministic Light-to-Voltage Conversion with a Tunable Two-Dimensional Diode.

Heterojunctions accompanied by energy barriers are of significant importance in two-dimensional materials-based electronics and optoelectronics. They provide more functional device performance, compared with their counterparts with uniform channels. Multimodal optoelectronic devices could be accomplished by elaborately designing band diagrams and architectures of the two-dimensional junctions.

On-chip photonics and optoelectronics with a van der Waals material dielectric platform.

During the last few decades, photonic integrated circuits have increased dramatically, facilitating many high-performance applications, such as on-chip sensing, data processing, and inter-chip communications. The currently dominating material platforms (, silicon, silicon nitride, lithium niobate, and indium phosphide), which have exhibited great application successes, however, suffer from their own disadvantages, such as the indirect bandgap of silicon for efficient light emission, and the compatibility challenges of indium phosphide with the silicon industry. Here, we report a new dielectric platform using nanostructured bulk van der Waals materials.

Switchable Photoresponse Mechanisms Implemented in Single van der Waals Semiconductor/Metal Heterostructure.

van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been extensively studied for functional applications, and most of the reported devices work with sole mechanism. The emerging metallic 2D materials provide us new options for building functional vdW heterostructures via rational band engineering design. Here, we investigate the vdW semiconductor/metal heterostructure built with 2D semiconducting InSe and metallic 1T-phase NbTe, whose electron affinity and work function almost exactly align.

Tunable Quantum Tunneling through a Graphene/BiSe Heterointerface for the Hybrid Photodetection Mechanism.

Graphene-based van der Waals heterostructures are promising building blocks for broadband photodetection because of the gapless nature of graphene. However, their performance is mostly limited by the inevitable trade-off between low dark current and photocurrent generation. Here, we demonstrate a hybrid photodetection mode based on the photogating effect coupled with the photovoltaic effect via tunable quantum tunneling through the unique graphene/BiSe heterointerface.

Single-step chemical vapour deposition of anti-pyramid MoS/WS vertical heterostructures.

Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 μm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy.

Dual-gated mono-bilayer graphene junctions.

A lateral junction with an atomically sharp interface is extensively studied in fundamental research and plays a key role in the development of electronics, photonics and optoelectronics. Here, we demonstrate an electrically tunable lateral junction at atomically sharp interfaces between dual-gated mono- and bilayer graphene. The transport properties of the mono-bilayer graphene interface are systematically investigated with - curves and transfer curves, which are measured with bias voltage applied in opposite directions across the asymmetric mono-bilayer interface.

Magnetic Actuation of Flexible Microelectrode Arrays for Neural Activity Recordings.

Implantable microelectrodes that can be remotely actuated via external fields are promising tools to interface with biological systems at a high degree of precision. Here, we report the development of flexible magnetic microelectrodes (FMμEs) that can be remotely actuated by magnetic fields. The FMμEs consist of flexible microelectrodes integrated with dielectrically encapsulated FeNi (iron-nickel) alloy microactuators.

Acceptor-free photomultiplication-type organic photodetectors.

A series of organic photodetectors (OPDs) is prepared with two donor materials as active layers, with the only difference being the weight ratio of the two donors (one polymer and one small molecule). The OPDs work according to a photodiode model with an external quantum efficiency (EQE) of less than 10% at -10 V when the weight ratio of the two materials is 1 : 1 (wt/wt). The EQE of an OPD with P3HT:DRCN5T (100 : 2, wt/wt) as the active layer reaches 1400% at -10 V, exhibiting the photomultiplication (PM) phenomenon.

Flexible Micropillar Electrode Arrays for In Vivo Neural Activity Recordings.

Flexible electronics that can form tight interfaces with neural tissues hold great promise for improving the diagnosis and treatment of neurological disorders and advancing brain/machine interfaces. Here, the facile fabrication of a novel flexible micropillar electrode array (µPEA) is described based on a biotemplate method. The flexible and compliant µPEA can readily integrate with the soft surface of a rat cerebral cortex.

Bacterial Cellulose as a Supersoft Neural Interfacing Substrate.

Biocompatible neural interfaces hold great promise for treating neurological disorders and enhancing the mental and physical ability of human beings. Most of the currently available neural interfaces are made from rigid, dense inorganic materials that cause tissue damage. We present supersoft multichannel electrodes by depositing gold layers on thin bacterial cellulose (BC) (Au-BC electrodes).

Multiscale Hierarchical Design of a Flexible Piezoresistive Pressure Sensor with High Sensitivity and Wide Linearity Range.

Flexible piezoresistive pressure sensors have been attracting wide attention for applications in health monitoring and human-machine interfaces because of their simple device structure and easy-readout signals. For practical applications, flexible pressure sensors with both high sensitivity and wide linearity range are highly desirable. Herein, a simple and low-cost method for the fabrication of a flexible piezoresistive pressure sensor with a hierarchical structure over large areas is presented.

Simultaneous surface and depth neural activity recording with graphene transistor-based dual-modality probes.

Subdural surface and penetrating depth probes are widely applied to record neural activities from the cortical surface and intracortical locations of the brain, respectively. Simultaneous surface and depth neural activity recording is essential to understand the linkage between the two modalities. Here, we develop flexible dual-modality neural probes based on graphene transistors.

Photomultiplication type narrowband organic photodetectors working at forward and reverse bias.

It is a great challenge to obtain narrowband and photomultiplication (PM) type organic photodetectors (OPDs) without optical filters due to the broad absorption range and large exciton binding energy of organic materials. Narrowband OPDs with the special structure of ITO/PFN-OX/P3HT : PCBM (100 : 1,wt/wt)/Al were successfully fabricated with different active layer thicknesses, exhibiting a tunable response window and PM phenomenon under bi-directional bias. The OPDs exhibit U-shaped EQE spectra with two narrowband response windows under forward bias and a single narrowband response window under reverse bias.

Highly Narrowband Photomultiplication Type Organic Photodetectors.

Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PCBM (100:1, wt/wt) as active layer without an optical filter.

Blown-Bubble Assembly and in Situ Fabrication of Sausage-like Graphene Nanotubes Containing Copper Nanoblocks.

We use a blown-bubble method to assemble Cu nanowires and in situ fabricate graphene-based one-dimensional heterostructures, including versatile sausage-like configurations consisting of multilayer graphene nanotubes (GNTs) filled by single or periodically arranged Cu nanoblocks (CuNBs). This is done by first assembling Cu nanowires among a polymer-based blown-bubble film (BBF) and then growing graphene onto the nanowire substrate using the polymer matrix as a solid carbon source by chemical-vapor deposition. The formation of sausage-like GNT@CuNB nanostructures is due to the partial melting and breaking of embedded Cu nanowires during graphene growth, which is uniquely related to our BBF process.

High Detectivity Graphene-Silicon Heterojunction Photodetector.

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias.