Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications.

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels are dependent on the number and the type of defects created. A new stepwise increase in the DCR is presented.

Fluorescence lifetime imaging with a megapixel SPAD camera and neural network lifetime estimation.

Fluorescence lifetime imaging microscopy (FLIM) is a key technology that provides direct insight into cell metabolism, cell dynamics and protein activity. However, determining the lifetimes of different fluorescent proteins requires the detection of a relatively large number of photons, hence slowing down total acquisition times. Moreover, there are many cases, for example in studies of cell collectives, where wide-field imaging is desired.