We demonstrate planar Si3N4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 million, and 7 million at 1060 nm, 1310 nm, and 1550 nm, respectively. By integrating the ultra-low-loss Si3N4 ring resonators with laterally offset planar waveguide directional couplers, optical add-drop and notch filters are demonstrated to have ultra-narrow bandwidths of 16 MHz, 38 MHz, and 300 MHz at 1060 nm, 1310 nm, and 1550 nm, respectively. These are the highest Qs reported for ring resonators with planar directional couplers, and ultra-narrowband microwave photonic filters can be realized based on these high-Q ring resonators.
View Article and Find Full Text PDFA ring isolator is demonstrated for the first time by directly bonding a cerium-substituted yttrium iron garnet (Ce:YIG) onto a silicon ring resonator using oxygen plasma enhanced bonding. The silicon waveguide is 600 nm wide and 295 nm thick with 500-nm-thick Ce:YIG on the top to have reasonable nonreciprocal effect and low optical loss. With a radial magnetic field applied to the ring isolator, it exhibits 9-dB isolation at resonance in the 1550 nm wavelength regime.
View Article and Find Full Text PDFWe characterize an approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition. Using a high-aspect-ratio core geometry, record low losses of 8-9 dB/m for a 0.5 mm bend radius down to 3 dB/m for a 2 mm bend radius are measured with ring resonator and optical frequency domain reflectometry techniques.
View Article and Find Full Text PDFWe investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell's wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity.
View Article and Find Full Text PDFAn electric-field-induced second-harmonic-generation signal in a nematic liquid crystal is used to map the electric field in an integrated-circuit-like sample. Since the electric-field-induced second-harmonic-generation signal intensity exhibits a strong dependence on the polarization of the incident laser beam, both the amplitude and the orientation of the electric field vectors can be measured. Combined with scanning second-harmonic-generation microscopy, three-dimensional electric field distribution can be easily visualized with high spatial resolution of the order of 1 microm.
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