Study of the Characteristics of BaSrTiMnO-Film Resistance Random Access Memory Devices.

In this study, BaSrTiMnO ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn for Ti was studied.

Photoelectric Properties of GaSSe (0 ≤ ≤ 1) Layered Crystals.

In this study, the photoelectric properties of a complete series of GaSSe (0 ≤ ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaSSe as the Se composition increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaSSe to light with increasing .

Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films.

Copper-doped zinc oxide films (ZnCuO) (x = 0, 2%, 4%, 6%) were fabricated on conductive substrates using the sol-gel process. The crystal structure, optical and resistive switching properties of ZnCuO films are studied and discussed. RRAM is made using ZnCuO as the resistive layer.

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO:SiO Thin Films on Resistive Random Access Memory Devices.

Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITO:SiO thin film resistive random access memory (RRAM) devices were observed and discussed. The ITO:SiO thin films were prepared using a co-sputtering deposition method on the TiN/Si substrate. For the RRAM device structure fabrication, an Al/ITO:SiO/TiN/Si structure was prepared by using aluminum for the top electrode and a TiN material for the bottom electrode.

Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO Capacitor.

By a sol-gel method, a BiFeO (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7-28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO capacitor on I-V hysteresis in the BFO TFT is 0.

Growth of Less than 20 nm SnO Nanowires Using an Anodic Aluminum Oxide Template for Gas Sensing.

Stannous oxide (SnO) nanowires were synthesized by a template and catalyst-free thermal oxidation process. After annealing a Sn nanowires-embedded anodic aluminum oxide (AAO) template in air, we obtained a large amount of SnO nanowires. SnO nanowires were first prepared by electrochemical deposition and an oxidization method based on an AAO template.

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd₂O₃) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd₂O₃ thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage () measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed.

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.

BiPrFeMnO₃/BiGdTiWO (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO₂/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.

Influence of Y-doped induced defects on the optical and magnetic properties of ZnO nanorod arrays prepared by low-temperature hydrothermal process.

One-dimensional pure zinc oxide (ZnO) and Y-doped ZnO nanorod arrays have been successfully fabricated on the silicon substrate for comparison by a simple hydrothermal process at the low temperature of 90°C. The Y-doped nanorods exhibit the same c-axis-oriented wurtzite hexagonal structure as pure ZnO nanorods. Based on the results of photoluminescence, an enhancement of defect-induced green-yellow visible emission is observed for the Y-doped ZnO nanorods.

Structure and photovoltaic properties of ZnO nanowire for dye-sensitized solar cells.

Aligned ZnO nanowires with different lengths (1 to approximately 4 μm) have been deposited on indium titanium oxide-coated glass substrates by using the solution phase deposition method for application as a work electrode in dye-sensitized solar cells (DSSC). From the results, the increases in length of zinc oxide (ZnO) nanowires can increase adsorption of the N3 dye through ZnO nanowires to improve the short-circuit photocurrent (Jsc) and open-circuit voltage (Voc), respectively. However, the Jsc and Voc values of DSSC with ZnO nanowires length of 4.

Thickness-dependent leakage current of (polyvinylidene fluoride/lead titanate) pyroelectric detectors.

The novel pyroelectric IR detectors have been fabricated using the Polyvinylidene Fluoride (PVDF)/Lead Titanate (PT) pyroelectric bilayer thin films, which were deposited onto Pt(111)/SiO2/Si(100) substrates by a sol-gel process. The ceramic/polymer structure was constructed of the randomly oriented polycrystalline PT film (approximately 1 microm) heated at 700 degrees C for 1 h and the beta-phase PVDF film crystallized at 65 degrees C for 2 h. The effects of PVDF thin film thickness (100 approximately 580 nm) on the pyroelectric response of IR detectors were studied.