Publications by authors named "Min-Jung Hong"

Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu ZnSn(S,Se) (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs.

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Photo(electro)catalysis methods have drawn significant attention for efficient, energy-saving, and environmental-friendly organic contaminant degradation in wastewater. However, conventional oxide-based powder photocatalysts are limited to UV-light absorption and are unfavorable in the subsequent postseparation process. In this paper, a large-area crystalline-semiconductor nitride membrane with a distinct nanoporous surface is fabricated, which can be scaled up to a full wafer and easily retrieved after photodegradation.

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Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices.

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A crude comparison of medical costs between people with disabilities (PWD) and without disabilities (PWoD) shows a much higher expenditure among PWD and such results have been a cause for further stigmatization. This study aims to empirically analyze whether the medical costs for PWD are actually high when characteristics related to medical costs are adjusted. Ten percent of the total population was randomly selected from the Korean National Health Insurance (NHI) Database in 2016.

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Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites-the leading class of emerging semiconductors-building a variety of bandgap alignments (i.e.

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Article Synopsis
  • Epitaxial growth using graphene is key for creating semiconductor membranes that can enhance cooling and reduce the cost of high voltage power devices and UV electronics.
  • Researchers successfully produced a 1 cm × 1 cm β-GaO nanomembrane by using compressive-strained epitaxial graphene on SiC, leading to highly responsive flexible solar-blind photodetectors.
  • The method utilized low interfacial toughness between β-GaO and graphene, allowing for easy exfoliation of the nanomembrane, making this technique promising for future integrated device technologies.
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Recent advancements in gallium oxide (GaO)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline GaO layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-GaO layer grown on an α-AlO substrate through an interfacial γ-InO layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-InO provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms.

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It is well-known that the alkali doping of polycrystalline CuZnSn(S,Se) (CZTSSe) and Cu(In,Ga)(Se,S) has a beneficial influence on the device performance and there are various hypotheses about the principles of performance improvement. This work clearly explains the effect of Na doping on the fill factor (FF) rather than on all of the solar cell parameters (open-circuit voltage, FF, and sometimes short circuit current) for overall performance improvement. When doping is optimized, the fabricated device shows sufficient built-in potential and selects a better carrier transport path by the high potential difference between the intragrains and the grain boundaries.

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Article Synopsis
  • Deep ultraviolet light-emitting diodes (DUV LEDs) are crucial for applications like sterilization and data storage but face challenges due to a lack of effective transparent electrodes.
  • Researchers created an innovative method using Cu@shell nanowires to adjust their electronic work function, allowing for high transparency and efficient contact with the p-AlGaN layer.
  • They successfully built transparent DUV LED chips that emitted light with good efficiency (3%) at a low voltage (6.4 V), offering a promising solution to improve optoelectronic devices across different wavelengths.
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CuZnSn(S,Se) (CZTSSe) thin-film solar cells are showing great promise due to using earth-abundant and nontoxic materials and tuning the band gap through the amount of S and Se. Flexible high-efficiency CZTSSe solar cells are one of the outstanding research challenges because they currently require the use of thick glass substrates due to the high-temperature heat treatment process, and for this reason, few flexible CZTSSe solar cells have been reported. Furthermore, most researchers have used thin glass and metal substrates with little flexibility; the power conversion efficiency (PCE or η) values of the solar cells made with them have been slightly lower.

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Article Synopsis
  • - The study presents a color tunable display made from two stacked micro-LED array chips that emit blue and green light.
  • - The pixels can be independently controlled, allowing for four different color modes and enabling tuning of colors across the blue to green spectrum (450 nm - 540 nm).
  • - This research showcases an innovative dual color micro-LED array design using a vertically stacked subpixel structure, advancing display technology.
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In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution.

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We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer.

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In this paper, we introduce very thin Indium tin oxide (ITO) layers (5, 10, and 15 nm) hybridized with a metal mesh to produce high-performance transparent conductive layers (TCLs) in near-ultraviolet light-emitting diodes (NUV LEDs). Using UV-vis-IR spectrometry, Hall measurement, and atomic force microscopy, we found that 10 nm was the optimal thickness for the very thin ITO layers in terms of outstanding transmittance and sheet resistance values as well as stable contact properties when hybridized with the metal mesh. The proposed layers showed a value of 4.

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We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface.

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Pristine graphene and a graphene interlayer inserted between indium tin oxide (ITO) and p-GaN have been analyzed and compared with ITO, which is a typical current spreading layer in lateral GaN LEDs. Beyond a certain current injection, the pristine graphene current spreading layer (CSL) malfunctioned due to Joule heat that originated from the high sheet resistance and low work function of the CSL. However, by combining the graphene and the ITO to improve the sheet resistance, it was found to be possible to solve the malfunctioning phenomenon.

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Objectives: The root of Astragalus membranaceus, regarded as a tonic in traditional Korean medicine, has been prescribed for long periods to treat chronic illness by boosting the immune system. Ultraviolet (UV) irradiation causes damage to skin connective tissue by degrading collagen, which is a major structural component of the extracellular matrix. Such damage is considered to be a cause of the wrinkling observed in premature ageing of the skin.

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Aim: The aim of this study was to develop an immunotherapy specific to a malignant glioma by examining the efficacy of glioma tumor-specific cytotoxic T lymphocytes (CTL) as well as the anti-tumor immunity by vaccination with dendritic cells (DC) engineered to express murine IL-12 using adenovirus-mediated gene transfer and pulsed with a GL26 glioma cell lysate (AdVIL-12/DC+GL26) was investigated. EXPERIMENT1: For measuring CTL activity, splenocytes were harvested from the mice immunized with AdVIL-12/DC+GL26 and restimulated with syngeneic GL26 for 7 days. The frequencies of antigen-specific cytokine-secreting T cell were determined with mIFN-gamma ELISPOT.

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