Improving the Performance of Solution-Processed Quantum Dot Light-Emitting Diodes via a HfO Interfacial Layer.

One of the major obstacles in the way of high-performance quantum dot light-emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a balanced charge injection was often achieved by lowering the electron injection efficiency; however, high performance next-generation QLEDs require the hole injection efficiency to be enhanced to the level of electron injection efficiency. Here, we introduce a solution-processed HfO layer for the enhanced hole injection efficiency.

Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO Thin Films.

In spite of great application potential as transparent -type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO (001) (STO) and BaSnO (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.

Mechanistic Understanding of Improved Performance of Graphene Cathode Inverted Organic Light-Emitting Diodes by Photoemission and Impedance Spectroscopy.

Modification of multilayer graphene films was investigated for a cathode of organic light-emitting diodes (OLEDs). By doping the graphene/electron transport layer (ETL) interface with Li, the driving voltage of the OLED was reduced dramatically from 24.5 to 3.

Multifunctional Bilayer Template for Near-Infrared-Sensitive Organic Solar Cells.

For organic solar cells (OSCs) based on nonplanar phthalocyanines, it has previously been reported that a thin film composed of triclinic crystals with face-on (or flat-lying)-oriented molecules, typically obtained with a CuI template layer, is desired for optical absorption in the near-infrared (NIR) spectral region. However, this work demonstrates that for a PbPc-C donor-acceptor pair, less face-on orientation with a broader orientation distribution obtained with a new template layer consisting of a ZnPc/CuI bilayer is more desirable in terms of solar cell efficiency than the face-on orientation. A NIR-sensitive PbPc-C OSC employing this bilayer-templated PbPc film is found to increase the internal quantum efficiency (IQE) by 36% on average in the NIR spectral region compared to a device using a CuI-templated PbPc film.

Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes.

Pristine graphene and a graphene interlayer inserted between indium tin oxide (ITO) and p-GaN have been analyzed and compared with ITO, which is a typical current spreading layer in lateral GaN LEDs. Beyond a certain current injection, the pristine graphene current spreading layer (CSL) malfunctioned due to Joule heat that originated from the high sheet resistance and low work function of the CSL. However, by combining the graphene and the ITO to improve the sheet resistance, it was found to be possible to solve the malfunctioning phenomenon.