Synthesis of Ultrathin Composition Graded Doped Lateral WSe/WS Heterostructures.

Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe/WS heterostructure by ambient pressure chemical vapor deposition in a single heat cycle.

Local oxidation and reduction of graphene.

Micrometer sized oxidation patterns were created in chemical vapor deposition grown graphene through scanning probe lithography (SPL) and then subsequently reduced by irradiation using a focused x-ray beam. Throughout the process, the films were characterized by lateral force microscopy, micro-Raman and micro-x-ray photoelectron spectroscopy. Firstly, the density of grain boundaries was found to be crucial in determining the maximum possible oxygen coverage with SPL.

Towards the continuous production of high crystallinity graphene via electrochemical exfoliation with molecular in situ encapsulation.

Large-scale production of uniform and high-quality graphene is required for practical applications of graphene. The electrochemical exfoliation method is considered as a promising approach for the practical production of graphene. However, the relatively low production rate of graphene currently hinders its usage.