Clinical narrative-aware deep neural network for emergency department critical outcome prediction.

Since early identification of potential critical patients in the Emergency Department (ED) can lower mortality and morbidity, this study seeks to develop a machine learning model capable of predicting possible critical outcomes based on the history and vital signs routinely collected at triage. We compare emergency physicians and the predictive performance of the machine learning model. Predictors including patients' chief complaints, present illness, past medical history, vital signs, and demographic data of adult patients (aged ≥ 18 years) visiting the ED at Shuang-Ho Hospital in New Taipei City, Taiwan, are extracted from the hospital's electronic health records.

Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:TaO-based electrolyte for all-solid-state electrochromic devices with enhanced performance.

In this study, we have investigated the improvements in the performance of an all-solid-state complementary electrochromic device (ECD) by using the proposed high pressure treatment (HPT). The Li:TaOelectrolyte layer was recrystallized by the HPT utilizing pressurized COgas (∼200 atm) and at low temperature (<60 °C), which enhanced the coloration performance of the WO/Li:TaO/NiO complementary ECD by ∼20%. The reliability and durability of the ECD were confirmed by long term transmittance retention measurements, which indicated an improvement in the coloration performance by ∼14% upon the release of the bias voltages.

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO-based RRAM device with a vanadium electrode.

This study proposes a method for a HfO-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism is activated by a positive forming bias.

Resistance Switching Characteristics Induced by O Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.

In this study, an O inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in resistive random access memory (RRAM). After the O plasma treatment, the previously conductive ITO film is oxidized and becomes less conductive. In addition, after capping the same ITO material for use as a top electrode, we found that the ITO/ITO(O plasma)/TiN device exhibits very stable and robust resistive switching characteristics.

Physical and chemical mechanisms in oxide-based resistance random access memory.

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition.

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated.