Publications by authors named "Min Kyu Yeom"
Article Synopsis
- - Aluminum scandium nitride (AlScN) shows great potential for future ferroelectric memories due to its high remanent charge density, but it requires thinner films to reduce the high coercive field for lower operating voltages.
- - Thinner films encounter issues with significant leakage currents, which complicate their compatibility with existing CMOS fabrication methods.
- - This study introduces a HfN bottom electrode that minimizes lattice mismatch and reduces leakage currents, allowing for a CMOS-compatible HfN/ASN/TiN structure that showcases ferroelectric properties even at thicknesses of 3 nm and decreases the coercive voltage to 4.35 V.
