Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications.

The Fermi level position at the interface of a heterostructure is a critical factor for device functionality, strongly influenced by surface-related phenomena. In this study, contactless electroreflectance (CER) was utilized for the first time to investigate the built-in electric field in MXene/GaN structures with the goal of understanding the carrier transfer across the MXene/GaN interface. Five MXenes with high work functions were examined: CrC, MoC, VC, VC, and TiC.

Interfacial Polarization of Thin Alq, Gaq, and Erq Films on GaN(0001).

This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq, Gaq, or Erq deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in situ under ultrahigh vacuum conditions. Thin layers have been vapor-deposited onto p-type GaN(0001) surfaces.

Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface.

This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method.

Temperature sensitivity modulation through changing the vanadium concentration in a LaMgTiO:V,Cr double perovskite optical thermometer.

To fulfil the requirements of operating at low temperature in a harsh environment, the investigation on optical thermometers plays an increasingly important role. In this work, the influence of vanadium concentration on the capability of temperature readout by La2MgTiO6:V5+,Cr3+ luminescent thermometers was investigated for the first time. The presence of V3+ and V5+ was verified by XPS and absorption measurements.

Au(100) as a Template for Pentacene Monolayer.

The surface of quasi-hexagonal reconstructed Au(100) is used as the template for monolayer pentacene (PEN) self-assembly. The system is characterized by means of scanning tunneling microscopy at room temperature and under an ultra-high vacuum. A new modulated pattern of molecules with long molecular axes (MA) arranged along hex stripes is found.