XPS depth profiling of nano-layers by a novel trial-and-error evaluation procedure.

In spite of its superior chemical sensitivity, XPS depth profiling is rarely used because of the alteration introduced by the sputter removal process and the resulting inhomogeneous in-depth concentration distribution. Moreover, the application of XPS becomes increasingly challenging in the case of the analysis of thin layers, if the thickness is in the range of 2-3 inelastic mean free paths (IMFP) of the photoelectrons. In this paper we will show that even in these unfavorable cases the XPS depth profiling is applicable.

Tungsten Carbide Nanolayer Formation by Ion Beam Mixing with Argon and Xenon Ions for Applications as Protective Coatings.

A novel nanolayer is formed by means of ion irradiation applicable as protective coating. Tungsten carbide (WC)-rich nanolayers were produced at room temperature by applying ion beam mixing of various carbon/tungsten (C/W) multilayer structures using argon and xenon ions with energy in the range of 40-120 keV and fluences between 0.25 and 3 × 10 ions/cm.

Large-area nanoengineering of graphene corrugations for visible-frequency graphene plasmons.

Quantum confinement of the charge carriers of graphene is an effective way to engineer its properties. This is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances. Here, we demonstrate a simple, large-area, edge-free nanostructuring technique, based on amplifying random nanoscale structural corrugations to a level where they efficiently confine charge carriers, without inducing significant inter-valley scattering.

Interface induced diffusion.

Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in AlO (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the AlO layer. The defects produced partially relaxed.

Inelastic mean free path data for Si corrected for surface excitation.

Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons.

Calculation of the surface excitation parameter for Si and Ge from measured electron backscattered spectra by means of a Monte-Carlo simulation.

A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure.