Publications by authors named "Mikhail Yu Yesin"

Article Synopsis
  • - This study explored the creation and structural characteristics of self-assembled GaSb/AlP quantum dots (SAQDs) using experimental techniques, focusing on their growth through molecular beam epitaxy on GaP and GaP/Si substrates.
  • - The research found that while SAQDs exhibit almost complete plastic strain relaxation, dislocations formed in GaP substrates significantly decrease luminescence efficiency, unlike those on GaP/Si substrates which maintain performance likely due to different types of dislocations.
  • - The GaP/Si-based SAQDs have a unique type II energy spectrum with an indirect bandgap, contributing to a long potential charge storage time of over 10 years, indicating their promise for applications in universal memory cells.
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Article Synopsis
  • - The study explores using low-temperature (LT) GaAs layers as a method to reduce dislocation defects in GaAs/Si heterostructures by investigating the effects of these layers and post-growth annealing.
  • - Results showed that introducing LT-GaAs layers and performing cyclic annealing significantly reduced dislocation density, surface roughness, and non-radiative recombination centers in the GaAs/Si regions.
  • - The improvements in the quality of near-surface GaAs layers are attributed to elastic deformations causing dislocation line bending and gallium vacancies diffusing into the GaAs layers, making these heterostructures suitable for high-quality light-emitting applications with quantum dots.
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