Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit.

Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial.

Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene.

Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy.

On the Origin of the Improvement of Electrodeposited MnOx Films in Water Oxidation Catalysis Induced by Heat Treatment.

Manganese oxides (MnOx ) are considered to be promising catalysts for water oxidation. Building on our previous studies showing that the catalytic activity of MnOx films electrodeposited from aqueous electrolytes is improved by a simple heat treatment, we have explored the origin of the catalytic enhancement at an electronic level by X-ray absorption spectroscopy (XAS). The Mn L-edge XA spectra measured at various heating stages were fitted by linear combinations of the spectra of the well-defined manganese oxides-MnO, Mn3 O4 , Mn2 O3 , MnO2 and birnessite.

Comparing graphene growth on Cu(111) versus oxidized Cu(111).

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer.