Electrical and Recombination Properties of Polar Orthorhombic κ-GaO Films Prepared by Halide Vapor Phase Epitaxy.

In this study, the structural and electrical properties of orthorhombic κ-GaO films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-GaO/AlN/Si structures, the formation of two-dimensional hole layers in the GaO was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-GaO and AlN. Structural studies indicated that in the thickest κ-GaO/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed.